Influence of interfacial layer on contact resistance

D. Roy; M.A.A. In 't Zand; R. Delhounge; J.H. Klootwijk; Robertus A.M. Wolters

Influence of interfacial layer on contact resistance

D. Roy, M.A.A. In 't Zand, R. Delhounge, J.H. Klootwijk, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process limiting interfacial layer. These measurements are performed using Cross Bridge Kelvin Resistor (CBKR) test structures on TiW- Phase Change Material (PCM) contacts.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	499-500
Number of pages	2
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

SC-ICF: Integrated Circuit Fabrication
METIS-255003
IR-62612
EWI-14612

Access to Document

http://eprints.eemcs.utwente.nl/secure2/14612/01/roy.pdf

Cite this

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title = "Influence of interfacial layer on contact resistance",

abstract = "The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process limiting interfacial layer. These measurements are performed using Cross Bridge Kelvin Resistor (CBKR) test structures on TiW- Phase Change Material (PCM) contacts.",

keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-255003, IR-62612, EWI-14612",

author = "D. Roy and {In 't Zand}, M.A.A. and R. Delhounge and J.H. Klootwijk and Wolters, {Robertus A.M.}",

year = "2008",

month = nov,

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "499--500",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

note = "null ; Conference date: 27-11-2008 Through 28-11-2008",

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Roy, D, In 't Zand, MAA, Delhounge, R, Klootwijk, JH & Wolters, RAM 2008, Influence of interfacial layer on contact resistance. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 499-500, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08. <http://eprints.eemcs.utwente.nl/secure2/14612/01/roy.pdf>

Influence of interfacial layer on contact resistance. / Roy, D.; In 't Zand, M.A.A.; Delhounge, R. et al.

Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. p. 499-500.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Influence of interfacial layer on contact resistance

AU - Roy, D.

AU - In 't Zand, M.A.A.

AU - Delhounge, R.

AU - Klootwijk, J.H.

AU - Wolters, Robertus A.M.

N1 - Conference code: 11

PY - 2008/11/27

Y1 - 2008/11/27

N2 - The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process limiting interfacial layer. These measurements are performed using Cross Bridge Kelvin Resistor (CBKR) test structures on TiW- Phase Change Material (PCM) contacts.

AB - The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process limiting interfacial layer. These measurements are performed using Cross Bridge Kelvin Resistor (CBKR) test structures on TiW- Phase Change Material (PCM) contacts.

KW - SC-ICF: Integrated Circuit Fabrication

KW - METIS-255003

KW - IR-62612

KW - EWI-14612

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 499

EP - 500

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

Y2 - 27 November 2008 through 28 November 2008

ER -