Influence of interfacial layer on contact resistance

D. Roy, M.A.A. In 't Zand, R. Delhounge, J.H. Klootwijk, R.A.M. Wolters

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    26 Citations (Scopus)

    Abstract

    The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process limiting interfacial layer. These measurements are performed using Cross Bridge Kelvin Resistor (CBKR) test structures on TiW- Phase Change Material (PCM) contacts.
    Original languageEnglish
    Title of host publicationProceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages499-500
    Number of pages2
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW
    NumberWoTUG-31

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    Country/TerritoryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • n/a OA procedure

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