Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers

R.A.J.M. van den Bos (Corresponding Author), J. Reinink, D.V. Lopaev, C.J. Lee, J.P.H. Benschop, F. Bijkerk

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
64 Downloads (Pure)

Abstract

A Mo/Si multilayer film may blister under hydrogen exposure. In this paper, we investigate the impact of intrinsic stress on blister formation in multilayers by varying the Si thickness between 3.4-11 nm and changing the hydrogen ion exposure conditions. Increasing the thickness of a-Si is found to introduce a higher average compressive stress in the multilayer film. Measurements of the average film stress before and after hydrogen exposure did not reveal a correlation between stress relaxation and the observation of surface blisters. Comparing the experimentally observed blister size distribution to that predicted by elastic models of blistering due to pressure, and thin film buckling showed that increasing hydrogen pressure under the blister cap is the main cause of the observed blisters. It is also shown that hydrogen diffusion plays an essential role in the blister formation process as sufficient hydrogen is required to pressurize the blister.

Original languageEnglish
Article number115302
Number of pages11
JournalJournal of physics D: applied physics
Volume51
Issue number11
DOIs
Publication statusPublished - 22 Feb 2018

Keywords

  • Bragg reflector
  • Hydrogen
  • Multilayer stress
  • Blister formation

Fingerprint Dive into the research topics of 'Influence of internal stress and layer thickness on the formation of hydrogen induced thin film blisters in Mo/Si multilayers'. Together they form a unique fingerprint.

Cite this