Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis

Salvatore Russo*, Luigi La Spina, Vincenzo D'Alessandro, Niccolò Rinaldi, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)

Abstract

The impact of layout parameters on the steady-state thermal behavior of bipolar junction transistors (BJTs) with full dielectric isolation is extensively analyzed by accurate DC measurements and 3-D numerical simulations. The influence of the aspect ratio of the emitter stripe, as well as the consequences of device scaling, are investigated from a thermal viewpoint. Furthermore, the beneficial effect of implementing aluminum nitride (AlN) thin-film heatspreaders is examined. It is shown that the silicon area surrounding the heat source, as well as the distance to high-thermal- conductivity regions, can have a significant impact on the thermal behavior. A recently proposed scaling rule for the thermal resistance - fully compatible with advanced transistor models - is successfully applied to a series of test BJT structures provided that a simple parameter optimization is carried out. Based on this, some generally applicable guidelines are given to effectively downscale fully-isolated bipolar transistors without significantly worsening the thermal issues.

Original languageEnglish
Pages (from-to)745-753
Number of pages9
JournalSolid-state electronics
Volume54
Issue number8
Early online date27 Apr 2010
DOIs
Publication statusPublished - Aug 2010
Externally publishedYes

Keywords

  • Aluminum nitride
  • Bipolar junction transistor
  • Dielectric isolation
  • Finite element method
  • Heatsinks
  • Heatspreaders
  • Silicon-on-glass
  • Silicon-on-insulator
  • Thermal behavior
  • Thermal design
  • Thermal resistance
  • Trench isolation

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