Abstract
The thermal behavior of bipolar junction transistors (BJTs) with full dielectric isolation is investigated in both time and frequency domain by means of thermal impedance measurements and calibrated electrothermal simulations. The influence of layout design parameters like area and aspect ratio of the emitter stripe, as well as distance between emitter and trench sidewalls, is extensively analyzed and quantified. For the first time, the influence of μm-thick AlN layers acting as heatspreaders is studied under dynamic conditions from both the thermal-only and electrothermal viewpoint. It is shown that employing AlN layers - besides effectively lowering the self-heating thermal resistance - also yields a faster transient thermal behavior. Equivalent RC thermal networks are automatically extracted from the experimental thermal impedance versus time to perform electrothermal transient simulations of AlN-covered devices and to analyze their thermal response in the frequency domain.
| Original language | English |
|---|---|
| Pages (from-to) | 754-762 |
| Number of pages | 9 |
| Journal | Solid-state electronics |
| Volume | 54 |
| Issue number | 8 |
| Early online date | 18 Apr 2010 |
| DOIs | |
| Publication status | Published - Aug 2010 |
| Externally published | Yes |
Keywords
- Aluminum nitride
- Bipolar junction transistor
- Foster network
- Heatspreader
- Self-heating
- Silicon-on-glass
- Thermal cut-off
- Thermal impedance
- Thermal resistance
- Thermal transient