Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

M.G. Hussein; Kerstin Worhoff; G. Sengo; A. Driessen

Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from $N_20$, 2%$SiH_4N_2$, $NH_3$ and 5%$PH_3/Ar$ gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N-H bond concentration of the layers decreased from 3.29 x $10^{21}$ to 0.45 x $10^{21}$ $cm^{-3}$ as the 5%$PH_3/Ar$ flow rate increased from 0 to 60 sccm. A simultaneous decrease of 0-H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ =1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%$PH_3/Ar$ flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ= 1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to I. 0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.

Original language	English
Title of host publication	Symposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society)
Editors	P. Megret, M. Wuilpart, S. Bette, N. Staquet
Place of Publication	Mons, Belgium
Publisher	IEEE
Pages	101-104
Number of pages	4
ISBN (Print)	2-9600226-4-5
Publication status	Published - 1 Dec 2005
Event	10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005 - Mons, Belgium Duration: 1 Dec 2008 → 2 Dec 2008 Conference number: 10

Conference

Conference	10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005
Country/Territory	Belgium
City	Mons
Period	1/12/08 → 2/12/08

Keywords

METIS-228223
EWI-12354
IR-58220
IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

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@inproceedings{1783065f21ea4af6bde9ad1a8d65b8fc,

title = "Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride",

abstract = "PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from $N_20$, 2%$SiH_4N_2$, $NH_3$ and 5%$PH_3/Ar$ gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N-H bond concentration of the layers decreased from 3.29 x $10^{21}$ to 0.45 x $10^{21}$ $cm^{-3}$ as the 5%$PH_3/Ar$ flow rate increased from 0 to 60 sccm. A simultaneous decrease of 0-H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ =1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%$PH_3/Ar$ flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ= 1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to I. 0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.",

keywords = "METIS-228223, EWI-12354, IR-58220, IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY",

author = "M.G. Hussein and Kerstin Worhoff and G. Sengo and A. Driessen",

year = "2005",

month = dec,

day = "1",

language = "English",

isbn = "2-9600226-4-5",

pages = "101--104",

editor = "P. Megret and M. Wuilpart and S. Bette and N. Staquet",

booktitle = "Symposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society)",

publisher = "IEEE",

address = "United States",

note = "10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005 ; Conference date: 01-12-2008 Through 02-12-2008",

}

Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2005, Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride. in P Megret, M Wuilpart, S Bette & N Staquet (eds), Symposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society). IEEE, Mons, Belgium, pp. 101-104, 10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005, Mons, Belgium, 1/12/08.

Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride. / Hussein, M.G.; Worhoff, Kerstin; Sengo, G. et al.
Symposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society). ed. / P. Megret; M. Wuilpart; S. Bette; N. Staquet. Mons, Belgium: IEEE, 2005. p. 101-104.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

AU - Hussein, M.G.

AU - Worhoff, Kerstin

AU - Sengo, G.

AU - Driessen, A.

N1 - Conference code: 10

PY - 2005/12/1

Y1 - 2005/12/1

N2 - PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from $N_20$, 2%$SiH_4N_2$, $NH_3$ and 5%$PH_3/Ar$ gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N-H bond concentration of the layers decreased from 3.29 x $10^{21}$ to 0.45 x $10^{21}$ $cm^{-3}$ as the 5%$PH_3/Ar$ flow rate increased from 0 to 60 sccm. A simultaneous decrease of 0-H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ =1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%$PH_3/Ar$ flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ= 1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to I. 0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.

AB - PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from $N_20$, 2%$SiH_4N_2$, $NH_3$ and 5%$PH_3/Ar$ gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N-H bond concentration of the layers decreased from 3.29 x $10^{21}$ to 0.45 x $10^{21}$ $cm^{-3}$ as the 5%$PH_3/Ar$ flow rate increased from 0 to 60 sccm. A simultaneous decrease of 0-H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ =1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%$PH_3/Ar$ flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ= 1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to I. 0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.

KW - METIS-228223

KW - EWI-12354

KW - IR-58220

KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

M3 - Conference contribution

SN - 2-9600226-4-5

SP - 101

EP - 104

BT - Symposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society)

A2 - Megret, P.

A2 - Wuilpart, M.

A2 - Bette, S.

A2 - Staquet, N.

PB - IEEE

CY - Mons, Belgium

T2 - 10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005

Y2 - 1 December 2008 through 2 December 2008

ER -

Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

Abstract

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Keywords

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