Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from $N_20$, 2%$SiH_4N_2$, $NH_3$ and 5%$PH_3/Ar$ gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N-H bond concentration of the layers decreased from 3.29 x $10^{21}$ to 0.45 x $10^{21}$ $cm^{-3}$ as the 5%$PH_3/Ar$ flow rate increased from 0 to 60 sccm. A simultaneous decrease of 0-H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ =1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%$PH_3/Ar$ flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ= 1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to I. 0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.
    Original languageEnglish
    Title of host publicationSymposium IEEE/LEOS Benelux (Lasers and Electro-Optics Society)
    EditorsP. Megret, M. Wuilpart, S. Bette, N. Staquet
    Place of PublicationMons, Belgium
    PublisherIEEE/LEOS Benelux Chapter
    Pages101-104
    Number of pages4
    ISBN (Print)2-9600226-4-5
    Publication statusPublished - 1 Dec 2005
    Event10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005 - Mons, Belgium
    Duration: 1 Dec 20082 Dec 2008
    Conference number: 10

    Conference

    Conference10th Annual Symposium of the IEEE/LEOS Benelux Chapter 2005
    CountryBelgium
    CityMons
    Period1/12/082/12/08

    Keywords

    • METIS-228223
    • EWI-12354
    • IR-58220
    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

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