Abstract
A new mathematical approach for the influence of mobile positive ions on the current-voltage characteristics of MOS structures is presented. This new method gives formulations which are more applicable than those described in the literature. Examples of the application of these formulations are presented.
Original language | English |
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Pages (from-to) | 2876-2879 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 49 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Dec 1978 |