Influence of positive ions on the current-voltage characteristics of MOS structures

A.G. Tangena*, J. Middelhoek, N.F. de Rooij

*Corresponding author for this work

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    Abstract

    A new mathematical approach for the influence of mobile positive ions on the current-voltage characteristics of MOS structures is presented. This new method gives formulations which are more applicable than those described in the literature. Examples of the application of these formulations are presented.

    Original languageEnglish
    Pages (from-to)2876-2879
    Number of pages4
    JournalJournal of Applied Physics
    Volume49
    Issue number5
    DOIs
    Publication statusPublished - 1 Dec 1978

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