Influence of PrBa2Cu3−xGaxO7 barrier material on electrical behaviour of ramp-type Josephson junctions

M.A.J. Verhoeven; Yu.M. Boguslavskij; E.M.C.M. Reuvekamp; G.J. Gerritsma; H. Rogalla

doi:10.1016/0921-4526(94)91002-2

Influence of PrBa₂Cu_3−xGa_xO₇ barrier material on electrical behaviour of ramp-type Josephson junctions

M.A.J. Verhoeven, Yu.M. Boguslavskij, E.M.C.M. Reuvekamp, G.J. Gerritsma, H. Rogalla

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

114 Downloads (Pure)

Abstract

The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3−xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.

Original language	English
Pages (from-to)	1345-1346
Number of pages	2
Journal	Physica B
Volume	194-196
Issue number	Part 1
DOIs	https://doi.org/10.1016/0921-4526(94)91002-2
Publication status	Published - 1994
Event	20th International Conference on Low Temperature Physics, LT-20 1993 - Eugene, United States Duration: 4 Aug 1993 → 11 Aug 1993 Conference number: 20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/0921-4526(94)91002-2

Verhoeven94influenceFinal published version, 156 KB

Cite this

@article{8602fd711da842c5be38d3e4d02d360c,

title = "Influence of PrBa2Cu3−xGaxO7 barrier material on electrical behaviour of ramp-type Josephson junctions",

abstract = "The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3−xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.",

author = "M.A.J. Verhoeven and Yu.M. Boguslavskij and E.M.C.M. Reuvekamp and G.J. Gerritsma and H. Rogalla",

year = "1994",

doi = "10.1016/0921-4526(94)91002-2",

language = "English",

volume = "194-196",

pages = "1345--1346",

journal = "Physica B",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "Part 1",

note = "20th International Conference on Low Temperature Physics, LT-20 1993, LT-20 ; Conference date: 04-08-1993 Through 11-08-1993",

}

TY - JOUR

T1 - Influence of PrBa2Cu3−xGaxO7 barrier material on electrical behaviour of ramp-type Josephson junctions

AU - Verhoeven, M.A.J.

AU - Boguslavskij, Yu.M.

AU - Reuvekamp, E.M.C.M.

AU - Gerritsma, G.J.

AU - Rogalla, H.

N1 - Conference code: 20

PY - 1994

Y1 - 1994

N2 - The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3−xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.

AB - The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3−xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.

U2 - 10.1016/0921-4526(94)91002-2

DO - 10.1016/0921-4526(94)91002-2

M3 - Article

SN - 0921-4526

VL - 194-196

SP - 1345

EP - 1346

JO - Physica B

JF - Physica B

IS - Part 1

T2 - 20th International Conference on Low Temperature Physics, LT-20 1993

Y2 - 4 August 1993 through 11 August 1993

ER -