The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3−xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.
|Number of pages||2|
|Issue number||Part 1|
|Publication status||Published - 1994|
|Event||20th International Conference on Low Temperature Physics, LT-20 1993 - Eugene, United States|
Duration: 4 Aug 1993 → 11 Aug 1993
Conference number: 20