The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.
- TST-uSPAM: micro Scanning Probe Array Memory
- TST-SMI: Formerly in EWI-SMI
- Young’s modulus
- Resonance frequency
- Finite Element Method
Nazeer, H., Woldering, L. A., Abelmann, L., Nguyen, D. M., Rijnders, A. J. H. M., & Elwenspoek, M. C. (2011). Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films. Microelectronic engineering, 88(8), 2345-2348. https://doi.org/10.1016/j.mee.2011.01.028