Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films

H. Nazeer, L.A. Woldering, Leon Abelmann, Duc Minh Nguyen, Augustinus J.H.M. Rijnders, Michael Curt Elwenspoek

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Abstract

The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.
Original languageUndefined
Pages (from-to)2345-2348
Number of pages4
JournalMicroelectronic engineering
Volume88
Issue number8
DOIs
Publication statusPublished - Aug 2011

Keywords

  • TST-uSPAM: micro Scanning Probe Array Memory
  • TST-SMI: Formerly in EWI-SMI
  • PZT
  • Orientation
  • EWI-19532
  • Cantilever
  • DRIE
  • Young’s modulus
  • Resonance frequency
  • METIS-279650
  • IR-77669
  • Finite Element Method

Cite this

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title = "Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films",
abstract = "The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.",
keywords = "TST-uSPAM: micro Scanning Probe Array Memory, TST-SMI: Formerly in EWI-SMI, PZT, Orientation, EWI-19532, Cantilever, DRIE, Young’s modulus, Resonance frequency, METIS-279650, IR-77669, Finite Element Method",
author = "H. Nazeer and L.A. Woldering and Leon Abelmann and Nguyen, {Duc Minh} and Rijnders, {Augustinus J.H.M.} and Elwenspoek, {Michael Curt}",
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language = "Undefined",
volume = "88",
pages = "2345--2348",
journal = "Microelectronic engineering",
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Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films. / Nazeer, H.; Woldering, L.A.; Abelmann, Leon; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Elwenspoek, Michael Curt.

In: Microelectronic engineering, Vol. 88, No. 8, 08.2011, p. 2345-2348.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films

AU - Nazeer, H.

AU - Woldering, L.A.

AU - Abelmann, Leon

AU - Nguyen, Duc Minh

AU - Rijnders, Augustinus J.H.M.

AU - Elwenspoek, Michael Curt

N1 - 10.1016/j.mee.2011.01.028

PY - 2011/8

Y1 - 2011/8

N2 - The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.

AB - The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.

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KW - Orientation

KW - EWI-19532

KW - Cantilever

KW - DRIE

KW - Young’s modulus

KW - Resonance frequency

KW - METIS-279650

KW - IR-77669

KW - Finite Element Method

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SN - 0167-9317

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