Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Zhenping Wang, Qirong Yao, Yalei Hu, Chuan Li, Marleen Hußmann, Ben Weintrub, Jan N. Kirchhof, Kirill Bolotin, Takashi Taniguchi, Kenji Watanabe, Siegfried Eigler*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
1 Downloads (Pure)

Abstract

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

Original languageEnglish
Pages (from-to)38011-38016
Number of pages6
JournalRSC advances
Volume9
Issue number65
DOIs
Publication statusPublished - 2019

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