Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Zhenping Wang; Qirong Yao; Yalei Hu; Chuan Li; Marleen Hußmann; Ben Weintrub; Jan N. Kirchhof; Kirill Bolotin; Takashi Taniguchi; Kenji Watanabe; Siegfried Eigler

doi:10.1039/c9ra09197a

Influence of SiO₂ or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

Zhenping Wang, Qirong Yao, Yalei Hu, Chuan Li, Marleen Hußmann, Ben Weintrub, Jan N. Kirchhof, Kirill Bolotin, Takashi Taniguchi, Kenji Watanabe, Siegfried Eigler^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (^0.5%G) is studied. Devices composed of monolayer ^0.5%G, partially deposited on SiO₂ and h-BN were used for transport measurements. We find that the ^0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO₂ for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

Original language	English
Pages (from-to)	38011-38016
Number of pages	6
Journal	RSC advances
Volume	9
Issue number	65
DOIs	https://doi.org/10.1039/c9ra09197a
Publication status	Published - 2019

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Wang-2019-Influence-of-sio-or-h-bn-substrate-Final published version, 1.54 MBLicence: CC BY

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Wang, Zhenping ; Yao, Qirong ; Hu, Yalei ; Li, Chuan ; Hußmann, Marleen ; Weintrub, Ben ; Kirchhof, Jan N. ; Bolotin, Kirill ; Taniguchi, Takashi ; Watanabe, Kenji ; Eigler, Siegfried. / Influence of SiO₂ or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene. In: RSC advances. 2019 ; Vol. 9, No. 65. pp. 38011-38016.

@article{1d22cac90126437b9cab5184828ed68c,

title = "Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene",

abstract = "The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.",

author = "Zhenping Wang and Qirong Yao and Yalei Hu and Chuan Li and Marleen Hu{\ss}mann and Ben Weintrub and Kirchhof, {Jan N.} and Kirill Bolotin and Takashi Taniguchi and Kenji Watanabe and Siegfried Eigler",

note = "Funding Information: This research is supported by the China Scholarship Council (CSC), the Deutsche Forschungsgemeinscha (DFG, German Research Foundation), project number 392444269 and 249559513, and ERC Grant No. 639739. Publisher Copyright: {\textcopyright} 2019 The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/c9ra09197a",

language = "English",

volume = "9",

pages = "38011--38016",

journal = "RSC advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "65",

}

Influence of SiO₂ or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene. / Wang, Zhenping; Yao, Qirong; Hu, Yalei; Li, Chuan; Hußmann, Marleen; Weintrub, Ben; Kirchhof, Jan N.; Bolotin, Kirill; Taniguchi, Takashi; Watanabe, Kenji; Eigler, Siegfried.

In: RSC advances, Vol. 9, No. 65, 2019, p. 38011-38016.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

AU - Wang, Zhenping

AU - Yao, Qirong

AU - Hu, Yalei

AU - Li, Chuan

AU - Hußmann, Marleen

AU - Weintrub, Ben

AU - Kirchhof, Jan N.

AU - Bolotin, Kirill

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Eigler, Siegfried

N1 - Funding Information: This research is supported by the China Scholarship Council (CSC), the Deutsche Forschungsgemeinscha (DFG, German Research Foundation), project number 392444269 and 249559513, and ERC Grant No. 639739. Publisher Copyright: © 2019 The Royal Society of Chemistry.

PY - 2019

Y1 - 2019

N2 - The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

AB - The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.

UR - http://www.scopus.com/inward/record.url?scp=85075762213&partnerID=8YFLogxK

U2 - 10.1039/c9ra09197a

DO - 10.1039/c9ra09197a

M3 - Article

AN - SCOPUS:85075762213

VL - 9

SP - 38011

EP - 38016

JO - RSC advances

JF - RSC advances

SN - 2046-2069

IS - 65

ER -

Influence of SiO₂ or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

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