Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones

In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}_h<k were found to disappear at higher temperature, while those with indices {hhk}_h<k only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}_h<k part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.