Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones

J. G.E. Gardeniers, W. E.J.R. Maas, R. Z.C. van Meerten, L. J. Giling

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Abstract

In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}h<k were found to disappear at higher temperature, while those with indices {hhk}h<k only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}h<k part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.

Original languageEnglish
Pages (from-to)832-842
Number of pages11
JournalJournal of crystal growth
Volume96
Issue number4
DOIs
Publication statusPublished - 1 Jan 1989
Externally publishedYes

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Surface reconstruction
habits
Silicon
Surface tension
Chemical vapor deposition
interfacial tension
vapor deposition
Adsorption
Crystals
silicon
plots
Dimers
Thermal effects
crystals
Hydrogen
adsorption
Temperature
temperature
temperature effects
critical temperature

Cite this

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title = "Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones",
abstract = "In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}h were found to disappear at higher temperature, while those with indices {hhk}h only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}h part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.",
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Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones. / Gardeniers, J. G.E.; Maas, W. E.J.R.; van Meerten, R. Z.C.; Giling, L. J.

In: Journal of crystal growth, Vol. 96, No. 4, 01.01.1989, p. 832-842.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones

AU - Gardeniers, J. G.E.

AU - Maas, W. E.J.R.

AU - van Meerten, R. Z.C.

AU - Giling, L. J.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}h were found to disappear at higher temperature, while those with indices {hhk}h only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}h part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.

AB - In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}h were found to disappear at higher temperature, while those with indices {hhk}h only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}h part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.

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