Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones

J. G.E. Gardeniers*, W. E.J.R. Maas, R. Z.C. van Meerten, L. J. Giling

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

27 Citations (Scopus)

Abstract

In part I, the authors reported on the appearance of a number of flat faces with indices {hhk} after growth on hemispherical substrates. Of these faces, those with indices {hhk}h<k were found to disappear at higher temperature, while those with indices {hhk}h<k only appear above a certain critical temperature. In this paper an interpretation of this phenomenon is given based on polar plots of surface tension versus crystallographic orientation, including the effects of dimer-like surface reconstructions and hydrogen adsorption. With the use of these plots it is possible to explain the observed temperature effects. The main result is that the faces in the {hhk}h<k part of the 〈110〉 zone, particularly {113}, on the one hand will be stabilized by surface re construction, but on the other hand they will be destabilized by adsorption.

Original languageEnglish
Pages (from-to)832-842
Number of pages11
JournalJournal of crystal growth
Volume96
Issue number4
DOIs
Publication statusPublished - 1 Jan 1989
Externally publishedYes

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