Influence of the angle between etched (near) Si{111} surfaces and the substrate orientation on the underetch rate during anisotropic wet-chemical etching of silicon

A.J. Nijdam, J.G.E. Gardeniers, J.W. Berenschot, E. van Veenendaal, J. van Suchtelen, M. Elwenspoek

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Chemical Compounds

Engineering & Materials Science