Abstract
In order to study the homoepitaxial growth of SrTiO3, several techniques have been used to obtain atomically flat surfaces. Here, the effect of annealing in an oxygen environment and etching in a buffered HF solution on the surface morphology is studied by atomic force microscopy and reflection high-energy electron diffraction. We will show the effect of these substrate treatments on the initial growth of SrTiO3.
Original language | Undefined |
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Pages (from-to) | 209-212 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Issue number | B56 |
DOIs | |
Publication status | Published - 1998 |
Keywords
- METIS-128800
- IR-24001