Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio

Ernst S. Kooij; A.R. Rama; J.J. Kelly

doi:10.1016/S0039-6028(96)00960-0

Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio

Ernst S. Kooij, A.R. Rama, J.J. Kelly

University of Twente

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Abstract

The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

Original language	Undefined
Pages (from-to)	125-135
Journal	Surface science
Volume	370
Issue number	2-3
DOIs	https://doi.org/10.1016/S0039-6028(96)00960-0
Publication status	Published - 1997

Keywords

IR-75177

Access to Document

10.1016/S0039-6028(96)00960-0

infrared

Cite this

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title = "Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio",

abstract = "The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.",

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AU - Kooij, Ernst S.

AU - Rama, A.R.

AU - Kelly, J.J.

PY - 1997

Y1 - 1997

N2 - The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

AB - The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

KW - IR-75177

U2 - 10.1016/S0039-6028(96)00960-0

DO - 10.1016/S0039-6028(96)00960-0

M3 - Article

SN - 0039-6028

VL - 370

SP - 125

EP - 135

JO - Surface science

JF - Surface science

IS - 2-3

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