Abstract
Many optical applications demand high reflectivity in a particular wavelength range and, simultaneously, suppression of radiation outside this prime range. Such parasitic radiation can lead to image distortions in imaging applications, or poor signal-noise ratios in spectroscopy. When working with sources of short-wavelength radiation based on laser-produced plasma, suppression of the scattered laser radiation is required. For these purposes we investigated a possibility to integrate an EUV reflecting multilayer coating with a resonant infrared anti-reflecting coating. Pilot samples manufactured with magnetron sputtering demonstrated 3 orders of magnitude suppression of infrared light while still reflecting 45% of the EUV radiation.
Original language | English |
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Pages | - |
Publication status | Published - 17 Jan 2012 |
Event | Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands Duration: 17 Jan 2012 → 18 Jan 2012 |
Conference
Conference | Physics@FOM Veldhoven 2012 |
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Country/Territory | Netherlands |
City | Veldhoven |
Period | 17/01/12 → 18/01/12 |
Keywords
- METIS-298893