Many optical applications demand high reflectivity in a particular wavelength range and, simultaneously, suppression of radiation outside this prime range. Such parasitic radiation can lead to image distortions in imaging applications, or poor signal-noise ratios in spectroscopy. When working with sources of short-wavelength radiation based on laser-produced plasma, suppression of the scattered laser radiation is required. For these purposes we investigated a possibility to integrate an EUV reflecting multilayer coating with a resonant infrared anti-reflecting coating. Pilot samples manufactured with magnetron sputtering demonstrated 3 orders of magnitude suppression of infrared light while still reflecting 45% of the EUV radiation.
|Publication status||Published - 17 Jan 2012|
|Event||Physics@FOM Veldhoven 2012: Tertiary Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing - NH Koningshof Veldhoven, Veldhoven, Netherlands|
Duration: 17 Jan 2012 → 18 Jan 2012
|Conference||Physics@FOM Veldhoven 2012|
|Period||17/01/12 → 18/01/12|