Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films

Mengdi Yang (Corresponding Author), Antonius A.i. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

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Abstract

This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.
Original languageEnglish
Pages (from-to)17-23
Number of pages7
JournalThin solid films
Volume649
DOIs
Publication statusPublished - 1 Mar 2018

Fingerprint

Tungsten
Atomic layer deposition
atomic layer epitaxy
tungsten
wire
Wire
Hydrogen
Substrates
hydrogen
Oxides
Oxygen
Transmission electron microscopy
preparation
transmission electron microscopy
electrical resistivity
oxides
oxygen
pulses
Temperature
temperature

Keywords

  • Hot-wire atomic layer deposition
  • Inherently selective growth
  • Tungsten
  • Transmission electron microscopy

Cite this

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title = "Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films",
abstract = "This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.",
keywords = "Hot-wire atomic layer deposition, Inherently selective growth, Tungsten, Transmission electron microscopy",
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year = "2018",
month = "3",
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doi = "10.1016/j.tsf.2018.01.016",
language = "English",
volume = "649",
pages = "17--23",
journal = "Thin solid films",
issn = "0040-6090",
publisher = "Elsevier",

}

Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films. / Yang, Mengdi (Corresponding Author); Aarnink, Antonius A.i.; Schmitz, Jurriaan; Kovalgin, Alexey Y.

In: Thin solid films, Vol. 649, 01.03.2018, p. 17-23.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films

AU - Yang, Mengdi

AU - Aarnink, Antonius A.i.

AU - Schmitz, Jurriaan

AU - Kovalgin, Alexey Y.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.

AB - This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.

KW - Hot-wire atomic layer deposition

KW - Inherently selective growth

KW - Tungsten

KW - Transmission electron microscopy

U2 - 10.1016/j.tsf.2018.01.016

DO - 10.1016/j.tsf.2018.01.016

M3 - Article

VL - 649

SP - 17

EP - 23

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

ER -