Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films

Mengdi Yang (Corresponding Author), Antonius A.i. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)
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    Abstract

    This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.
    Original languageEnglish
    Pages (from-to)17-23
    Number of pages7
    JournalThin solid films
    Volume649
    DOIs
    Publication statusPublished - 1 Mar 2018

    Fingerprint

    Tungsten
    Atomic layer deposition
    atomic layer epitaxy
    tungsten
    wire
    Wire
    Hydrogen
    Substrates
    hydrogen
    Oxides
    Oxygen
    Transmission electron microscopy
    preparation
    transmission electron microscopy
    electrical resistivity
    oxides
    oxygen
    pulses
    Temperature
    temperature

    Keywords

    • Hot-wire atomic layer deposition
    • Inherently selective growth
    • Tungsten
    • Transmission electron microscopy

    Cite this

    @article{e12f3f1bd7564a0d946164660d6cdc18,
    title = "Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films",
    abstract = "This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.",
    keywords = "Hot-wire atomic layer deposition, Inherently selective growth, Tungsten, Transmission electron microscopy",
    author = "Mengdi Yang and Aarnink, {Antonius A.i.} and Jurriaan Schmitz and Kovalgin, {Alexey Y.}",
    year = "2018",
    month = "3",
    day = "1",
    doi = "10.1016/j.tsf.2018.01.016",
    language = "English",
    volume = "649",
    pages = "17--23",
    journal = "Thin solid films",
    issn = "0040-6090",
    publisher = "Elsevier",

    }

    Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films. / Yang, Mengdi (Corresponding Author); Aarnink, Antonius A.i.; Schmitz, Jurriaan; Kovalgin, Alexey Y.

    In: Thin solid films, Vol. 649, 01.03.2018, p. 17-23.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films

    AU - Yang, Mengdi

    AU - Aarnink, Antonius A.i.

    AU - Schmitz, Jurriaan

    AU - Kovalgin, Alexey Y.

    PY - 2018/3/1

    Y1 - 2018/3/1

    N2 - This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.

    AB - This work demonstrates area-selective growth of tungsten (W) films by hot-wire assisted atomic layer deposition (HWALD). With this recently developed technique, low-resistivity alpha-phase W films can be deposited by using sequential pulses of atomic hydrogen (at-H) and WF6 at a substrate temperature of 275 °C. As reported in this article, the deposition is highly selective. HWALD tungsten grows with little to no incubation time on W, Co and Si surfaces. On the other hand, no growth is observed on TiN, Al2O3 and SiO2 surfaces. The interfaces of W and various substrates are examined by transmission electron microscopy. The absence of oxygen in the interfaces indicates that the atomic-hydrogen not only serves as a suitable ALD precursor for W, but is here shown to effectively reduce the native oxides of W and Co at the ALD process conditions, enabling in situ surface preparation before starting the deposition sequence.

    KW - Hot-wire atomic layer deposition

    KW - Inherently selective growth

    KW - Tungsten

    KW - Transmission electron microscopy

    U2 - 10.1016/j.tsf.2018.01.016

    DO - 10.1016/j.tsf.2018.01.016

    M3 - Article

    VL - 649

    SP - 17

    EP - 23

    JO - Thin solid films

    JF - Thin solid films

    SN - 0040-6090

    ER -