Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

B. Van Hao, Frank Bert Wiggers, Anubha Gupta, Duc Minh Nguyen, Antonius A.I. Aarnink, Machiel Pieter de Jong, Alexeij Y. Kovalgin

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Abstract

The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N2-H2 mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (1010) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.
Original languageUndefined
Pages (from-to)01A111
Number of pages6
JournalJournal of vacuum science and technology A: vacuum, surfaces, and films
Volume33
Issue number1
DOIs
Publication statusPublished - 2015

Keywords

  • EWI-25182
  • IR-92263
  • METIS-306072

Cite this

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title = "Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films",
abstract = "The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N2-H2 mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (1010) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.",
keywords = "EWI-25182, IR-92263, METIS-306072",
author = "{Van Hao}, B. and Wiggers, {Frank Bert} and Anubha Gupta and Nguyen, {Duc Minh} and Aarnink, {Antonius A.I.} and {de Jong}, {Machiel Pieter} and Kovalgin, {Alexeij Y.}",
note = "eemcs-eprint-25182",
year = "2015",
doi = "10.1116/1.4898434",
language = "Undefined",
volume = "33",
pages = "01A111",
journal = "Journal of vacuum science and technology A: vacuum, surfaces, and films",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
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TY - JOUR

T1 - Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

AU - Van Hao, B.

AU - Wiggers, Frank Bert

AU - Gupta, Anubha

AU - Nguyen, Duc Minh

AU - Aarnink, Antonius A.I.

AU - de Jong, Machiel Pieter

AU - Kovalgin, Alexeij Y.

N1 - eemcs-eprint-25182

PY - 2015

Y1 - 2015

N2 - The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N2-H2 mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (1010) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

AB - The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N2-H2 mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (1010) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

KW - EWI-25182

KW - IR-92263

KW - METIS-306072

U2 - 10.1116/1.4898434

DO - 10.1116/1.4898434

M3 - Article

VL - 33

SP - 01A111

JO - Journal of vacuum science and technology A: vacuum, surfaces, and films

JF - Journal of vacuum science and technology A: vacuum, surfaces, and films

SN - 0734-2101

IS - 1

ER -