Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory

O. Gurlu, Henricus J.W. Zandvliet, Bene Poelsema, Sefa Dag, S. Ciraci

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Abstract

We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.
Original languageUndefined
Pages (from-to)085312-
Number of pages10
JournalPhysical review B: Condensed matter and materials physics
Volume70
Issue number8
DOIs
Publication statusPublished - 2004

Keywords

  • METIS-218728
  • IR-47820

Cite this

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title = "Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory",
abstract = "We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.",
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Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory. / Gurlu, O.; Zandvliet, Henricus J.W.; Poelsema, Bene; Dag, Sefa; Ciraci, S.

In: Physical review B: Condensed matter and materials physics, Vol. 70, No. 8, 2004, p. 085312-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory

AU - Gurlu, O.

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

AU - Dag, Sefa

AU - Ciraci, S.

PY - 2004

Y1 - 2004

N2 - We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.

AB - We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.

KW - METIS-218728

KW - IR-47820

U2 - 10.1103/PhysRevB.70.085312

DO - 10.1103/PhysRevB.70.085312

M3 - Article

VL - 70

SP - 085312-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 8

ER -