Insights to emitter saturation current densities of boron implanted samples based on defects simulations

K. R.C. Mok*, R. C.G. Naber, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
6 Downloads (Pure)

Abstract

Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to Joe degradation.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages245-248
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012
Conference number: 19

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Ion Implantation Technology 2012, IIT 2012
Abbreviated titleIIT 2012
CountrySpain
CityValladolid
Period25/06/1229/06/12

Keywords

  • boron interstitial clusters
  • dislocation loops
  • Emitter saturation current density
  • Ion implantation

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