Insights to emitter saturation current densities of boron implanted samples based on defects simulations

K. R.C. Mok; R. C.G. Naber; L. K. Nanver

doi:10.1063/1.4766534

Insights to emitter saturation current densities of boron implanted samples based on defects simulations

K. R.C. Mok^*
, R. C.G. Naber
, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

19 Downloads (Pure)

Abstract

Emitter saturation current densities, J_oe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve J_oe, implying more complete defect dissolution. Simulations show that significant degradation in J_oe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to J_oe degradation.

Original language	English
Title of host publication	Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages	245-248
Number of pages	4
DOIs	https://doi.org/10.1063/1.4766534
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain Duration: 25 Jun 2012 → 29 Jun 2012 Conference number: 19

Publication series

Name	AIP Conference Proceedings
Volume	1496
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	19th International Conference on Ion Implantation Technology 2012, IIT 2012
Abbreviated title	IIT 2012
Country/Territory	Spain
City	Valladolid
Period	25/06/12 → 29/06/12

Keywords

boron interstitial clusters
dislocation loops
Emitter saturation current density
Ion implantation

Access to Document

10.1063/1.4766534

Mok_2012Final published version, 347 KB

Cite this

@inproceedings{be4345487c3e4bf38fefceadc460c5b8,

title = "Insights to emitter saturation current densities of boron implanted samples based on defects simulations",

abstract = "Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to Joe degradation.",

keywords = "boron interstitial clusters, dislocation loops, Emitter saturation current density, Ion implantation",

author = "Mok, \{K. R.C.\} and Naber, \{R. C.G.\} and Nanver, \{L. K.\}",

year = "2012",

month = dec,

day = "1",

doi = "10.1063/1.4766534",

language = "English",

isbn = "9780735411098",

series = "AIP Conference Proceedings",

pages = "245--248",

booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",

note = "19th International Conference on Ion Implantation Technology 2012, IIT 2012, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",

}

Mok, KRC, Naber, RCG & Nanver, LK 2012, Insights to emitter saturation current densities of boron implanted samples based on defects simulations. in Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology. AIP Conference Proceedings, vol. 1496, pp. 245-248, 19th International Conference on Ion Implantation Technology 2012, IIT 2012, Valladolid, Spain, 25/06/12. https://doi.org/10.1063/1.4766534

Insights to emitter saturation current densities of boron implanted samples based on defects simulations. / Mok, K. R.C.; Naber, R. C.G.; Nanver, L. K.
Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology. 2012. p. 245-248 (AIP Conference Proceedings; Vol. 1496).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Insights to emitter saturation current densities of boron implanted samples based on defects simulations

AU - Mok, K. R.C.

AU - Naber, R. C.G.

AU - Nanver, L. K.

N1 - Conference code: 19

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to Joe degradation.

AB - Emitter saturation current densities, Joe have been investigated with different boron implantation dose and annealing conditions. The higher thermal budgets used here are shown experimentally to improve Joe, implying more complete defect dissolution. Simulations show that significant degradation in Joe can be attributed to the presence of dislocation loops. In addition, in cases where dislocation loops have been annealed, high dose boron implantation still results in stable boron interstitial clusters, which contributes to Joe degradation.

KW - boron interstitial clusters

KW - dislocation loops

KW - Emitter saturation current density

KW - Ion implantation

UR - https://www.scopus.com/pages/publications/84874206815

U2 - 10.1063/1.4766534

DO - 10.1063/1.4766534

M3 - Conference contribution

AN - SCOPUS:84874206815

SN - 9780735411098

T3 - AIP Conference Proceedings

SP - 245

EP - 248

BT - Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology

T2 - 19th International Conference on Ion Implantation Technology 2012, IIT 2012

Y2 - 25 June 2012 through 29 June 2012

ER -

Insights to emitter saturation current densities of boron implanted samples based on defects simulations

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