Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon

Edward Bernhardi, Kerstin Worhoff, J. Bradley, R.M. de Ridder, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, scientific, military and industrial fields, thanks to their high stability, low noise, narrow linewidth emission and broad wavelength tunability. Its favorable optical properties and compatibility with existing silicon waveguide technology make rare-earth-ion-doped aluminum oxide (Al2O3) a very promising gain medium to realize such integrated lasers. Al2O3:Er3+ waveguide lasers are of interest due to their emission near 1.55 μm in the telecommunication C-band. The fabrication of low-loss Al2O3:Er3+ waveguides and internal optical gain over an 80-nm wavelength range with a peak gain of 2.0 dB/cm enabled the realization of various integrated Al2O3:Er3+ lasers on standard thermally oxidized silicon substrates. We report on the fabrication and performance of optically pumped channel waveguide ring and distributed feedback (DFB) lasers in Al2O3:Er3+. The low threshold ring-cavity lasers provide laser wavelength selection in the range 1530–1557 nm when varying the length of the output coupler from the ring. The DFB lasers exhibit output powers of more than 3 mW with slope efficiencies as high as 6.2% in single-frequency operation at 1545.2 nm with linewidths below 15 kHz. These performance data illustrate the significance of Al2O3:Er3+ as a laser gain medium in dense wavelength division multiplexing in telecommunication networks.
Original languageUndefined
Title of host publicationSymposium K: Rare earth doped materials for optical based technologies
Place of PublicationStrasbourg
PublisherEuropean Materials Research Society (E-MRS)
Pages5-6
Number of pages2
ISBN (Print)not assigned
Publication statusPublished - 7 Jun 2010
EventRare earth doped materials for optical based technologies 2010 (Symposium K of the 2010 EMRS Spring Meeting) - Strasbourg, France
Duration: 7 Jun 201011 Jun 2010

Publication series

NameE-MRS 2010 Spring Meeting
PublisherEuropean Materials Research Society (E-MRS)

Conference

ConferenceRare earth doped materials for optical based technologies 2010 (Symposium K of the 2010 EMRS Spring Meeting)
CountryFrance
CityStrasbourg
Period7/06/1011/06/10
Other7-11 June 2010

Keywords

  • IR-73229
  • METIS-275649
  • Erbium
  • Integrated Optics
  • EWI-18461
  • On-chip laser
  • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
  • IOMS-APD: Active Photonic Devices
  • Aluminum oxide

Cite this

Bernhardi, E., Worhoff, K., Bradley, J., de Ridder, R. M., & Pollnau, M. (2010). Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon. In Symposium K: Rare earth doped materials for optical based technologies (pp. 5-6). (E-MRS 2010 Spring Meeting). Strasbourg: European Materials Research Society (E-MRS).
Bernhardi, Edward ; Worhoff, Kerstin ; Bradley, J. ; de Ridder, R.M. ; Pollnau, Markus. / Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon. Symposium K: Rare earth doped materials for optical based technologies. Strasbourg : European Materials Research Society (E-MRS), 2010. pp. 5-6 (E-MRS 2010 Spring Meeting).
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abstract = "Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, scientific, military and industrial fields, thanks to their high stability, low noise, narrow linewidth emission and broad wavelength tunability. Its favorable optical properties and compatibility with existing silicon waveguide technology make rare-earth-ion-doped aluminum oxide (Al2O3) a very promising gain medium to realize such integrated lasers. Al2O3:Er3+ waveguide lasers are of interest due to their emission near 1.55 μm in the telecommunication C-band. The fabrication of low-loss Al2O3:Er3+ waveguides and internal optical gain over an 80-nm wavelength range with a peak gain of 2.0 dB/cm enabled the realization of various integrated Al2O3:Er3+ lasers on standard thermally oxidized silicon substrates. We report on the fabrication and performance of optically pumped channel waveguide ring and distributed feedback (DFB) lasers in Al2O3:Er3+. The low threshold ring-cavity lasers provide laser wavelength selection in the range 1530–1557 nm when varying the length of the output coupler from the ring. The DFB lasers exhibit output powers of more than 3 mW with slope efficiencies as high as 6.2{\%} in single-frequency operation at 1545.2 nm with linewidths below 15 kHz. These performance data illustrate the significance of Al2O3:Er3+ as a laser gain medium in dense wavelength division multiplexing in telecommunication networks.",
keywords = "IR-73229, METIS-275649, Erbium, Integrated Optics, EWI-18461, On-chip laser, IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES, IOMS-APD: Active Photonic Devices, Aluminum oxide",
author = "Edward Bernhardi and Kerstin Worhoff and J. Bradley and {de Ridder}, R.M. and Markus Pollnau",
note = "http://www.emrs-strasbourg.com",
year = "2010",
month = "6",
day = "7",
language = "Undefined",
isbn = "not assigned",
series = "E-MRS 2010 Spring Meeting",
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Bernhardi, E, Worhoff, K, Bradley, J, de Ridder, RM & Pollnau, M 2010, Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon. in Symposium K: Rare earth doped materials for optical based technologies. E-MRS 2010 Spring Meeting, European Materials Research Society (E-MRS), Strasbourg, pp. 5-6, Rare earth doped materials for optical based technologies 2010 (Symposium K of the 2010 EMRS Spring Meeting), Strasbourg, France, 7/06/10.

Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon. / Bernhardi, Edward; Worhoff, Kerstin; Bradley, J.; de Ridder, R.M.; Pollnau, Markus.

Symposium K: Rare earth doped materials for optical based technologies. Strasbourg : European Materials Research Society (E-MRS), 2010. p. 5-6 (E-MRS 2010 Spring Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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AU - Worhoff, Kerstin

AU - Bradley, J.

AU - de Ridder, R.M.

AU - Pollnau, Markus

N1 - http://www.emrs-strasbourg.com

PY - 2010/6/7

Y1 - 2010/6/7

N2 - Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, scientific, military and industrial fields, thanks to their high stability, low noise, narrow linewidth emission and broad wavelength tunability. Its favorable optical properties and compatibility with existing silicon waveguide technology make rare-earth-ion-doped aluminum oxide (Al2O3) a very promising gain medium to realize such integrated lasers. Al2O3:Er3+ waveguide lasers are of interest due to their emission near 1.55 μm in the telecommunication C-band. The fabrication of low-loss Al2O3:Er3+ waveguides and internal optical gain over an 80-nm wavelength range with a peak gain of 2.0 dB/cm enabled the realization of various integrated Al2O3:Er3+ lasers on standard thermally oxidized silicon substrates. We report on the fabrication and performance of optically pumped channel waveguide ring and distributed feedback (DFB) lasers in Al2O3:Er3+. The low threshold ring-cavity lasers provide laser wavelength selection in the range 1530–1557 nm when varying the length of the output coupler from the ring. The DFB lasers exhibit output powers of more than 3 mW with slope efficiencies as high as 6.2% in single-frequency operation at 1545.2 nm with linewidths below 15 kHz. These performance data illustrate the significance of Al2O3:Er3+ as a laser gain medium in dense wavelength division multiplexing in telecommunication networks.

AB - Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, scientific, military and industrial fields, thanks to their high stability, low noise, narrow linewidth emission and broad wavelength tunability. Its favorable optical properties and compatibility with existing silicon waveguide technology make rare-earth-ion-doped aluminum oxide (Al2O3) a very promising gain medium to realize such integrated lasers. Al2O3:Er3+ waveguide lasers are of interest due to their emission near 1.55 μm in the telecommunication C-band. The fabrication of low-loss Al2O3:Er3+ waveguides and internal optical gain over an 80-nm wavelength range with a peak gain of 2.0 dB/cm enabled the realization of various integrated Al2O3:Er3+ lasers on standard thermally oxidized silicon substrates. We report on the fabrication and performance of optically pumped channel waveguide ring and distributed feedback (DFB) lasers in Al2O3:Er3+. The low threshold ring-cavity lasers provide laser wavelength selection in the range 1530–1557 nm when varying the length of the output coupler from the ring. The DFB lasers exhibit output powers of more than 3 mW with slope efficiencies as high as 6.2% in single-frequency operation at 1545.2 nm with linewidths below 15 kHz. These performance data illustrate the significance of Al2O3:Er3+ as a laser gain medium in dense wavelength division multiplexing in telecommunication networks.

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KW - Erbium

KW - Integrated Optics

KW - EWI-18461

KW - On-chip laser

KW - IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES

KW - IOMS-APD: Active Photonic Devices

KW - Aluminum oxide

M3 - Conference contribution

SN - not assigned

T3 - E-MRS 2010 Spring Meeting

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ER -

Bernhardi E, Worhoff K, Bradley J, de Ridder RM, Pollnau M. Integrated Al2O3:Er3+ microring and distributed feedback lasers on silicon. In Symposium K: Rare earth doped materials for optical based technologies. Strasbourg: European Materials Research Society (E-MRS). 2010. p. 5-6. (E-MRS 2010 Spring Meeting).