Integrated Al2O3:Er3+ ring lasers on silicon with wide wavelength selectivity

J. Bradley, Remco Stoffer, L. Agazzi, F. Ay, Kerstin Worhoff, Markus Pollnau

    Research output: Contribution to journalArticleAcademicpeer-review

    68 Citations (Scopus)


    Integrated Al2O3:Er3+ channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling into and low laser output power coupling from the ring is achieved in a straightforward design. Output powers of up to 9.5 µW and slope efficiencies of up to 0.11% were measured while lasing was observed for a threshold diode-pump power as low as 6.4 mW for ring lasers with cavity lengths varying from 2.0 to 5.5 cm. Wavelength selection in the range 1530–1557 nm was demonstrated by varying the length of the output coupler from the ring.
    Original languageEnglish
    Pages (from-to)73-75
    Number of pages3
    JournalOptics letters
    Issue number1
    Publication statusPublished - Jan 2010


    • EC Grant Agreement nr.: FP6/017501
    • EWI-17269
    • IR-69655
    • METIS-276008
    • IOMS-APD: Active Photonic Devices

    Fingerprint Dive into the research topics of 'Integrated Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup> ring lasers on silicon with wide wavelength selectivity'. Together they form a unique fingerprint.

    Cite this