Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and microstructured by reactive ion etching. Channel waveguides with losses of 0.3 dB/cm at 1.5 µm were obtained. Internal net optical gain was achieved over a bandwidth of 80 nm (1500-1580 nm), with a peak gain of 2.0 dB/cm at 1533 nm. 170 Gbit/s data amplification was demonstrated with open eye diagrams. Integrated channel waveguide ring lasers were realized with output powers of up to 9.5 µW, slope efficiencies of up to 0.11%, and a threshold power as low as 6.4 mW, with wavelength selection in the range 1530 to 1557 nm. Distributed-phase-shift holographically written surface relief Bragg gratings were integrated via reactive ion etching of SiO2 overlay films and single-mode lasing with a linewidth as low as 1.5 kHz was demonstrated.
|Title of host publication||IV International Workshop on Photonic and Electronic Materials 2010|
|Subtitle of host publication||Scientific Program and Workshop Abstracts|
|Place of Publication||San Sebastian, Spain|
|Publisher||Dostonia International Physics Center|
|Number of pages||1|
|Publication status||Published - Jul 2010|
|Event||IV International Workshop on Photonic and Electronic Materials 2010 - San Sebastian, Spain|
Duration: 5 Jul 2010 → 7 Jul 2010
|Workshop||IV International Workshop on Photonic and Electronic Materials 2010|
|Period||5/07/10 → 7/07/10|
- IOMS-APD: Active Photonic Devices
Pollnau, M., Bradley, J., Bernhardi, E., Ay, F., de Ridder, R. M., & Worhoff, K. (2010). Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip. In IV International Workshop on Photonic and Electronic Materials 2010: Scientific Program and Workshop Abstracts (pp. 44-44). San Sebastian, Spain: Dostonia International Physics Center.