Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip

Markus Pollnau, J. Bradley, Edward Bernhardi, F. Ay, R.M. de Ridder, Kerstin Worhoff

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    Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and microstructured by reactive ion etching. Channel waveguides with losses of 0.3 dB/cm at 1.5 µm were obtained. Internal net optical gain was achieved over a bandwidth of 80 nm (1500-1580 nm), with a peak gain of 2.0 dB/cm at 1533 nm. 170 Gbit/s data amplification was demonstrated with open eye diagrams. Integrated channel waveguide ring lasers were realized with output powers of up to 9.5 µW, slope efficiencies of up to 0.11%, and a threshold power as low as 6.4 mW, with wavelength selection in the range 1530 to 1557 nm. Distributed-phase-shift holographically written surface relief Bragg gratings were integrated via reactive ion etching of SiO2 overlay films and single-mode lasing with a linewidth as low as 1.5 kHz was demonstrated.
    Original languageEnglish
    Title of host publicationIV International Workshop on Photonic and Electronic Materials 2010
    Subtitle of host publicationScientific Program and Workshop Abstracts
    Place of PublicationSan Sebastian, Spain
    PublisherDostonia International Physics Center
    Number of pages1
    Publication statusPublished - Jul 2010
    EventIV International Workshop on Photonic and Electronic Materials 2010 - San Sebastian, Spain
    Duration: 5 Jul 20107 Jul 2010


    WorkshopIV International Workshop on Photonic and Electronic Materials 2010
    CitySan Sebastian


    • IR-72291
    • IOMS-APD: Active Photonic Devices
    • EWI-18089
    • METIS-275596

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