Integrated Circuit with a Non-Volatile MOS RAM Cell

F.P. Widdershoven (Inventor), Anne J. Annema (Inventor), M. Storms (Inventor), Marcel J M Pelgrom (Inventor)

Research output: Patent

Original languageUndefined
Patent numberWO-0126113
Priority date12/04/01
Publication statusIn preparation - 12 Apr 2001

Keywords

  • METIS-202777

Cite this

Widdershoven, F. P., Annema, A. J., Storms, M., & Pelgrom, M. J. M. (2001). Integrated Circuit with a Non-Volatile MOS RAM Cell. Manuscript in preparation. (Patent No. WO-0126113).