Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications

S. Radovanovic; Anne J. Annema; Bram Nauta

doi:10.1109/ICMEL.2004.1314632

Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications

S. Radovanovic, Anne J. Annema, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for λ=780 nm and λ=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.

Original language	English
Title of host publication	24th International Conference on Microelectronics 2004
Publisher	IEEE
Pages	333-336
Number of pages	4
ISBN (Print)	0780381661
DOIs	https://doi.org/10.1109/ICMEL.2004.1314632
Publication status	Published - May 2004
Event	24th International Conference on Microelectronics, MIEL 2004 - University of Nis, Nis, Serbia Duration: 16 May 2004 → 19 May 2004 Conference number: 24

Conference

Conference	24th International Conference on Microelectronics, MIEL 2004
Abbreviated title	MIEL 2004
Country/Territory	Serbia
City	Nis
Period	16/05/04 → 19/05/04

Keywords

METIS-219310
EWI-14480
IR-48115

Access to Document

10.1109/ICMEL.2004.1314632

01314632Final published version, 284 KB

Cite this

@inproceedings{883cfab0050d4059aaee706f7b2c4830,

title = "Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications",

abstract = "The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for λ=780 nm and λ=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.",

keywords = "METIS-219310, EWI-14480, IR-48115",

author = "S. Radovanovic and Annema, {Anne J.} and Bram Nauta",

year = "2004",

month = may,

doi = "10.1109/ICMEL.2004.1314632",

language = "English",

isbn = "0780381661",

pages = "333--336",

booktitle = "24th International Conference on Microelectronics 2004",

publisher = "IEEE",

address = "United States",

note = "24th International Conference on Microelectronics, MIEL 2004, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

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T1 - Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications

AU - Radovanovic, S.

AU - Annema, Anne J.

AU - Nauta, Bram

N1 - Conference code: 24

PY - 2004/5

Y1 - 2004/5

N2 - The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for λ=780 nm and λ=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.

AB - The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical pick-up units is discussed. Two photodiode structures with a highest responsivity are studied: nwell/p-substrate and p+/nwell/p-substrate (double photodiode). The photodiode bandwidths are compared for λ=780 nm and λ=650 nm wavelength, corresponding to the lasers for CD and DVD, respectively. Slow substrate current component limits the intrinsic bandwidth of nwell/p-substrate and p+/nwell/p-substrate photodiodes to 6MHz and 7MHz, for a CD application as well as 70MHz and 100MHz for a DVD application. The electrical bandwidth of these diodes in combination with typical transimpedance amplifiers, will be always larger than the calculated intrinsic bandwidths meaning that the diode capacitance is not critical in total photoreceiver design.

KW - METIS-219310

KW - EWI-14480

KW - IR-48115

U2 - 10.1109/ICMEL.2004.1314632

DO - 10.1109/ICMEL.2004.1314632

M3 - Conference contribution

SN - 0780381661

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EP - 336

BT - 24th International Conference on Microelectronics 2004

PB - IEEE

T2 - 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

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