Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips?

B. Rejaei*, K. T. Ng, C. Floerkemeier, N. P. Pham, L. Nanver, J. N. Burghartz

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society Press
Pages460-463
Number of pages4
ISBN (Electronic)2863322486
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000
Conference number: 30

Conference

Conference30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated titleESSDERC 2000
CountryIreland
CityCork
Period11/09/0013/09/00

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