Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips?

B. Rejaei; K. T. Ng; C. Floerkemeier; N. P. Pham; L. Nanver; J. N. Burghartz

doi:10.1109/ESSDERC.2000.194814

Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips?

B. Rejaei^*, K. T. Ng, C. Floerkemeier, N. P. Pham, L. Nanver, J. N. Burghartz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE
Pages	460-463
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194814
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated title	ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

Access to Document

10.1109/ESSDERC.2000.194814

Cite this

Rejaei, B., Ng, K. T., Floerkemeier, C., Pham, N. P., Nanver, L., & Burghartz, J. N. (2000). Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips? In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 460-463). Article 1503744 IEEE. https://doi.org/10.1109/ESSDERC.2000.194814

@inproceedings{43edce0c598b4d569846ec84ebb390e9,

title = "Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips?",

abstract = "We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.",

author = "B. Rejaei and Ng, {K. T.} and C. Floerkemeier and Pham, {N. P.} and L. Nanver and Burghartz, {J. N.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2000.194814",

language = "English",

isbn = "9782863322482",

pages = "460--463",

editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

}

Rejaei, B, Ng, KT, Floerkemeier, C, Pham, NP, Nanver, L & Burghartz, JN 2000, Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips? in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503744, IEEE, pp. 460-463, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194814

Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips? / Rejaei, B.; Ng, K. T.; Floerkemeier, C. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE, 2000. p. 460-463 1503744.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Integrated transmission lines on high-resistivity silicon

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

AU - Rejaei, B.

AU - Ng, K. T.

AU - Floerkemeier, C.

AU - Pham, N. P.

AU - Nanver, L.

AU - Burghartz, J. N.

N1 - Conference code: 30

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.

AB - We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.

UR - http://www.scopus.com/inward/record.url?scp=15744404046&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2000.194814

DO - 10.1109/ESSDERC.2000.194814

M3 - Conference contribution

AN - SCOPUS:15744404046

SN - 9782863322482

SP - 460

EP - 463

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

A2 - Grunbacher, H.

A2 - Crean, Gabriel M.

A2 - Lane, W. A.

A2 - McCabe, Frank A.

PB - IEEE

Y2 - 11 September 2000 through 13 September 2000

ER -

Integrated transmission lines on high-resistivity silicon: Coplanar waveguides or microstrips?

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this