Abstract
We present an experimental study of the effect of the accumulation or inversion layer at the surface of a high-resistivity silicon substrate on the loss of transmission lines. It is shown that the relative contribution of the surface channel to the total loss becomes increasingly significant as the silicon resistivity decreases. The experiments demonstrate that the effect of the surface channel on the loss of an integrated microstrip is considerably lower than that of a comparable coplanar waveguide, favoring microstrips for integration on high-resistivity silicon substrates.
Original language | English |
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Title of host publication | ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference |
Editors | H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe |
Publisher | IEEE |
Pages | 460-463 |
Number of pages | 4 |
ISBN (Electronic) | 2863322486 |
ISBN (Print) | 9782863322482 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Externally published | Yes |
Event | 30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30 |
Conference
Conference | 30th European Solid-State Device Research Conference, ESSDERC 2000 |
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Abbreviated title | ESSDERC 2000 |
Country/Territory | Ireland |
City | Cork |
Period | 11/09/00 → 13/09/00 |