Abstract
A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.
Original language | Undefined |
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Title of host publication | Proceedings of the 23rd Micromechanics and Microsystems Europe Workshop, MME 2012 |
Place of Publication | Ilmenau, Germany |
Publisher | Verlag ISLE, Betriebsstatte des ISLE e.V. |
Pages | A03# |
Number of pages | 4 |
ISBN (Print) | 978-3-938843-71-0 |
Publication status | Published - 9 Sept 2012 |
Event | 23rd Micromechanics and Microsystems Europe Workshop, MME 2012 - Ilmenau, Germany Duration: 9 Sept 2012 → 12 Sept 2012 Conference number: 23 |
Publication series
Name | |
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Publisher | Verlag ISLE, Betriebsstätte des ISLE e.V. |
Workshop
Workshop | 23rd Micromechanics and Microsystems Europe Workshop, MME 2012 |
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Abbreviated title | MME |
Country/Territory | Germany |
City | Ilmenau |
Period | 9/09/12 → 12/09/12 |
Keywords
- Surface channel technology
- EWI-22514
- METIS-289783
- IR-82164
- access holes