Integrated wafer-through fluidic connection for surface channel technology

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    1 Downloads (Pure)


    A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.
    Original languageUndefined
    Title of host publicationProceedings of the 23rd Micromechanics and Microsystems Europe Workshop, MME 2012
    Place of PublicationIlmenau, Germany
    PublisherVerlag ISLE, Betriebsstatte des ISLE e.V.
    Number of pages4
    ISBN (Print)978-3-938843-71-0
    Publication statusPublished - 9 Sept 2012
    Event23rd Micromechanics and Microsystems Europe Workshop, MME 2012 - Ilmenau, Germany
    Duration: 9 Sept 201212 Sept 2012
    Conference number: 23

    Publication series

    PublisherVerlag ISLE, Betriebsstätte des ISLE e.V.


    Workshop23rd Micromechanics and Microsystems Europe Workshop, MME 2012
    Abbreviated titleMME


    • Surface channel technology
    • EWI-22514
    • METIS-289783
    • IR-82164
    • access holes

    Cite this