Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

J. Kong*, B. J. LeRoy, S. G. Lemay, C. Dekker

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800°C) involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes.

Original languageEnglish
Article number112106
Pages (from-to)1-3
Number of pages3
JournalApplied physics letters
Volume86
Issue number11
DOIs
Publication statusPublished - 14 Mar 2005
Externally publishedYes

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