Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector

P. Le Minh; J. Holleman; Johan W. Berenschot; Niels Roelof Tas; Albert van den Berg

Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channel.

Original language	English
Title of host publication	Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	644-648
Number of pages	5
ISBN (Print)	90-73461-33-2
Publication status	Published - 29 Nov 2002
Event	Semiconductor Sensor and Actuator Technology, SeSens 2002 - Veldhoven, Netherlands Duration: 29 Nov 2002 → 30 Nov 2002

Workshop

Workshop	Semiconductor Sensor and Actuator Technology, SeSens 2002
Country/Territory	Netherlands
City	Veldhoven
Period	29/11/02 → 30/11/02

Keywords

EWI-15595
METIS-207488
IR-43817

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LeMinh02integrationFinal published version, 76 KB

Cite this

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title = "Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector",

abstract = "Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channel.",

keywords = "EWI-15595, METIS-207488, IR-43817",

author = "\{Le Minh\}, P. and J. Holleman and Berenschot, \{Johan W.\} and Tas, \{Niels Roelof\} and \{van den Berg\}, Albert",

year = "2002",

month = nov,

day = "29",

language = "English",

isbn = "90-73461-33-2",

pages = "644--648",

booktitle = "Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002",

publisher = "STW",

note = "Semiconductor Sensor and Actuator Technology, SeSens 2002 ; Conference date: 29-11-2002 Through 30-11-2002",

}

Le Minh, P, Holleman, J, Berenschot, JW , Tas, NR & van den Berg, A 2002, Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector. in Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002. STW, Utrecht, The Netherlands, pp. 644-648, Semiconductor Sensor and Actuator Technology, SeSens 2002, Veldhoven, Netherlands, 29/11/02.

Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector. / Le Minh, P.; Holleman, J.; Berenschot, Johan W. et al.
Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002. Utrecht, The Netherlands: STW, 2002. p. 644-648.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector

AU - Le Minh, P.

AU - Holleman, J.

AU - Berenschot, Johan W.

AU - Tas, Niels Roelof

AU - van den Berg, Albert

PY - 2002/11/29

Y1 - 2002/11/29

N2 - Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channel.

AB - Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channel.

KW - EWI-15595

KW - METIS-207488

KW - IR-43817

M3 - Conference contribution

SN - 90-73461-33-2

SP - 644

EP - 648

BT - Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002

PB - STW

CY - Utrecht, The Netherlands

T2 - Semiconductor Sensor and Actuator Technology, SeSens 2002

Y2 - 29 November 2002 through 30 November 2002

ER -

Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector

Abstract

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Keywords

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