Integration of Single Oriented Oxide Superlattices on Silicon Using Various Template Techniques

Binbin Chen, Zoran Jovanovic, Stefan Abel, Phu Tran Phong Le, Ufuk Halisdemir, Mark Smithers, Daniel Diaz-Fernandez, Matjaž Spreitzer, Jean Fompeyrine, Guus Rijnders, Gertjan Koster*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

To benefit from the diverse functionalities of perovskite oxides in silicon-based complementary metal oxide semiconductor (CMOS) technology, integrating oxides into a silicon platform has become one of the major tasks for oxide research. Using the deposition of LaMnO3/SrTiO3 (STO) superlattices (SLs) as a case study, we demonstrate that (001) single oriented oxide SLs can be integrated on Si using various template techniques, including a single-layer buffer of STO prepared by molecular beam epitaxy (MBE) and pulsed laser deposition, a multilayer buffer of Y-stabilized zirconia/CeO2/LaNiO3/STO, and STO-coated two-dimensional nanosheets of Ca2Nb3O10 (CNO) and reduced graphene oxide. The textured SL grown on STO-coated CNO nanosheets shows the highest crystallinity, owing to the small lattice mismatch between CNO and STO as well as less clamping from a Si substrate. The epitaxial SL grown on STO buffer prepared by MBE suffers the largest thermal strain, giving rise to a strongly suppressed saturation magnetization but an enhanced coercive field, as compared to the reference SL grown on an STO single crystal. These optional template techniques used for integrating oxides on Si are of significance to fulfill practical applications of oxide films in different fields.

Original languageEnglish
Pages (from-to)42925-42932
Number of pages8
JournalACS applied materials & interfaces
Volume12
Issue number38
DOIs
Publication statusPublished - 23 Sep 2020

Keywords

  • magnetism
  • oxide superlattice
  • silicon
  • template
  • epitaxy

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