Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers

Edin Sarajlic, Meint J. de Boer, Henricus V. Jansen, N. Arnal, M. Puech, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

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    Abstract

    A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.
    Original languageEnglish
    Title of host publication14th MicroMechanics Europe Workshop, MME 2003
    Place of PublicationDelft
    PublisherEburon
    Pages123-126
    Number of pages4
    ISBN (Print)9080826618
    Publication statusPublished - 2 Nov 2003
    Event14th MicroMechanics Europe Workshop, MME 2003 - Delft, Netherlands
    Duration: 2 Nov 20034 Nov 2003
    Conference number: 14

    Publication series

    Name
    PublisherEburon

    Conference

    Conference14th MicroMechanics Europe Workshop, MME 2003
    Abbreviated titleMME
    CountryNetherlands
    CityDelft
    Period2/11/034/11/03

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    Keywords

    • METIS-214514
    • EWI-19724
    • IR-46300

    Cite this

    Sarajlic, E., de Boer, M. J., Jansen, H. V., Arnal, N., Puech, M., Krijnen, G. J. M., & Elwenspoek, M. C. (2003). Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers. In 14th MicroMechanics Europe Workshop, MME 2003 (pp. 123-126). Delft: Eburon.