Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers

Edin Sarajlic; Meint J. de Boer; Henricus V. Jansen; N. Arnal; M. Puech; Gijsbertus J.M. Krijnen; Michael Curt Elwenspoek

Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers

Edin Sarajlic, Meint J. de Boer, Henricus V. Jansen, N. Arnal, M. Puech, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.

Original language	English
Title of host publication	14th MicroMechanics Europe Workshop, MME 2003
Place of Publication	Delft
Publisher	Eburon
Pages	123-126
Number of pages	4
ISBN (Print)	9080826618
Publication status	Published - 2 Nov 2003
Event	14th MicroMechanics Europe Workshop, MME 2003 - Delft, Netherlands Duration: 2 Nov 2003 → 4 Nov 2003 Conference number: 14

Publication series

Name
Publisher	Eburon

Conference

Conference	14th MicroMechanics Europe Workshop, MME 2003
Abbreviated title	MME
Country/Territory	Netherlands
City	Delft
Period	2/11/03 → 4/11/03

Keywords

METIS-214514
EWI-19724
IR-46300

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@inproceedings{14475f14b99245e78a1a3f7222f09806,

title = "Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers",

abstract = "A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.",

keywords = "METIS-214514, EWI-19724, IR-46300",

author = "Edin Sarajlic and {de Boer}, {Meint J.} and Jansen, {Henricus V.} and N. Arnal and M. Puech and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",

year = "2003",

month = nov,

day = "2",

language = "English",

isbn = "9080826618",

publisher = "Eburon",

pages = "123--126",

booktitle = "14th MicroMechanics Europe Workshop, MME 2003",

note = "14th MicroMechanics Europe Workshop, MME 2003, MME ; Conference date: 02-11-2003 Through 04-11-2003",

}

Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers. / Sarajlic, Edin; de Boer, Meint J.; Jansen, Henricus V. et al.

14th MicroMechanics Europe Workshop, MME 2003. Delft : Eburon, 2003. p. 123-126.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers

AU - Sarajlic, Edin

AU - de Boer, Meint J.

AU - Jansen, Henricus V.

AU - Arnal, N.

AU - Puech, M.

AU - Krijnen, Gijsbertus J.M.

AU - Elwenspoek, Michael Curt

N1 - Conference code: 14

PY - 2003/11/2

Y1 - 2003/11/2

N2 - A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.

AB - A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.

KW - METIS-214514

KW - EWI-19724

KW - IR-46300

M3 - Conference contribution

SN - 9080826618

SP - 123

EP - 126

BT - 14th MicroMechanics Europe Workshop, MME 2003

PB - Eburon

CY - Delft

T2 - 14th MicroMechanics Europe Workshop, MME 2003

Y2 - 2 November 2003 through 4 November 2003

ER -

Integration of trench isolation technology and plasma release for advanced MEMS design on standard silicon wafers

Abstract

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Keywords

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