Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

Chuan Li, Bob De Ronde, Artem Nikitin, Yingkai Huang, Mark S. Golden, Anne De Visser, Alexander Brinkman

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)
42 Downloads (Pure)

Abstract

The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is expected to be integer valued only when the scattering is strong. For weaker interaction, a noninteger quantum Hall effect is expected and indications for this effect are measured.

Original languageEnglish
Article number195427
JournalPhysical review B: Covering condensed matter and materials physics
Volume96
Issue number19
DOIs
Publication statusPublished - 20 Nov 2017

Fingerprint

quantum counters
Quantum Hall effect
insulators
Cones
quantum Hall effect
Scattering
cones
counters
Surface states
interactions
scattering
Electric fields
Magnetic fields
integers
indication
Electrons
electric fields
magnetic fields
electrons

Cite this

@article{159543fa474c4579a3b81ea702648900,
title = "Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2",
abstract = "The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is expected to be integer valued only when the scattering is strong. For weaker interaction, a noninteger quantum Hall effect is expected and indications for this effect are measured.",
author = "Chuan Li and {De Ronde}, Bob and Artem Nikitin and Yingkai Huang and Golden, {Mark S.} and {De Visser}, Anne and Alexander Brinkman",
year = "2017",
month = "11",
day = "20",
doi = "10.1103/PhysRevB.96.195427",
language = "English",
volume = "96",
journal = "Physical review B: Covering condensed matter and materials physics",
issn = "2469-9950",
publisher = "American Institute of Physics",
number = "19",

}

Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2. / Li, Chuan; De Ronde, Bob; Nikitin, Artem; Huang, Yingkai; Golden, Mark S.; De Visser, Anne; Brinkman, Alexander.

In: Physical review B: Covering condensed matter and materials physics, Vol. 96, No. 19, 195427, 20.11.2017.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

AU - Li, Chuan

AU - De Ronde, Bob

AU - Nikitin, Artem

AU - Huang, Yingkai

AU - Golden, Mark S.

AU - De Visser, Anne

AU - Brinkman, Alexander

PY - 2017/11/20

Y1 - 2017/11/20

N2 - The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is expected to be integer valued only when the scattering is strong. For weaker interaction, a noninteger quantum Hall effect is expected and indications for this effect are measured.

AB - The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is expected to be integer valued only when the scattering is strong. For weaker interaction, a noninteger quantum Hall effect is expected and indications for this effect are measured.

UR - http://www.scopus.com/inward/record.url?scp=85038849364&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.96.195427

DO - 10.1103/PhysRevB.96.195427

M3 - Article

VL - 96

JO - Physical review B: Covering condensed matter and materials physics

JF - Physical review B: Covering condensed matter and materials physics

SN - 2469-9950

IS - 19

M1 - 195427

ER -