Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe2

Chuan Li*, Bob De Ronde, Artem Nikitin, Yingkai Huang, Mark S. Golden, Anne De Visser, Alexander Brinkman

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
64 Downloads (Pure)

Abstract

The quantum Hall effect is studied in the topological insulator BiSbTeSe2. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is expected to be integer valued only when the scattering is strong. For weaker interaction, a noninteger quantum Hall effect is expected and indications for this effect are measured.

Original languageEnglish
Article number195427
JournalPhysical review B: Covering condensed matter and materials physics
Volume96
Issue number19
DOIs
Publication statusPublished - 20 Nov 2017

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