Interactions of C in layered Mo–Si structures

J. Bosgra, L.W. Veldhuizen, E. Zoethout, J. Verhoeven, R.A. Loch, Andrey Yakshin, Frederik Bijkerk

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)


Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of 600 °C was studied using X-ray photoelectron spectroscopy sputter depth profiling. A strong diffusion asymmetry of C in a Mo–Si layered structure is observed. C does interdiffuse with Mo, however, even at 600 °C, no interdiffusion of Si and C was observed. Based on these results, the thermal stability of Mo/Si-based layer structures was improved by depositing a Si/C/Mo2C/C/Si layer structure. This structure shows superior thermal stability at 600 °C compared to the Mo2C/Si and Mo/Si layer structure.
Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalThin solid films
Publication statusPublished - 2013


  • IR-88074
  • METIS-299267


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