Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

Deepu Roy; Dirk J Gravesteijn; Robertus A.M. Wolters

doi:10.1557/opl.2011.978

Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

Deepu Roy, Dirk J Gravesteijn, Robertus A.M. Wolters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ϿC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ϿC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.

Original language	Undefined
Title of host publication	Proceedings of 2011 MRS Spring Meeting
Place of Publication	Cambridge, UK
Publisher	Cambridge University Press
Pages	q03-02
Number of pages	6
ISBN (Print)	not assigned
DOIs	https://doi.org/10.1557/opl.2011.978
Publication status	Published - 25 Apr 2011
Event	MRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	MRS proceedings
Publisher	Cambridge University Press
Volume	1337
ISSN (Print)	1946-4274

Conference

Conference	MRS Spring Meeting 2011
Country	United States
City	San Francisco
Period	25/04/11 → 29/04/11

Keywords

METIS-285045
EWI-21355
IR-79894

Access to Document

10.1557/opl.2011.978

http://eprints.eemcs.utwente.nl/secure2/21355/01/deepu_mrs.pdf

Cite this

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title = "Interface Characterization of Metals and Metal-nitrides to Phase Change Materials",

abstract = "We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ϿC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ϿC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.",

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Interface Characterization of Metals and Metal-nitrides to Phase Change Materials. / Roy, Deepu; Gravesteijn, Dirk J ; Wolters, Robertus A.M.

Proceedings of 2011 MRS Spring Meeting. Cambridge, UK : Cambridge University Press, 2011. p. q03-02 (MRS proceedings; Vol. 1337).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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PY - 2011/4/25

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N2 - We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ϿC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ϿC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.

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