Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ϿC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ϿC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.
    Original languageUndefined
    Title of host publicationProceedings of 2011 MRS Spring Meeting
    Place of PublicationCambridge, UK
    PublisherCambridge University Press
    Pagesq03-02
    Number of pages6
    ISBN (Print)not assigned
    DOIs
    Publication statusPublished - 25 Apr 2011
    EventMRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States
    Duration: 25 Apr 201129 Apr 2011

    Publication series

    NameMRS proceedings
    PublisherCambridge University Press
    Volume1337
    ISSN (Print)1946-4274

    Conference

    ConferenceMRS Spring Meeting 2011
    CountryUnited States
    CitySan Francisco
    Period25/04/1129/04/11

    Keywords

    • METIS-285045
    • EWI-21355
    • IR-79894

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