The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.
Jurchescu, O. D., Popinciuc, M., van Wees, B. J., & Palstra, T. T. M. (2007). Interface-controlled, high-mobility organic transistors. Advanced materials, 19, 688-692. https://doi.org/10.1002/adma.200600929