Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu, Mihaita Popinciuc, Bart J. van Wees, Thomas T.M. Palstra

Research output: Contribution to journalArticleAcademicpeer-review

302 Citations (Scopus)

Abstract

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.
Original languageEnglish
Pages (from-to)688-692
Number of pages5
JournalAdvanced materials
Volume19
DOIs
Publication statusPublished - 1 Feb 2007
Externally publishedYes

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