Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu; Mihaita Popinciuc; Bart J. van Wees; Thomas T.M.  Palstra

doi:10.1002/adma.200600929

Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu, Mihaita Popinciuc, Bart J. van Wees, Thomas T.M. Palstra

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Advanced materials
Volume	19
DOIs	https://doi.org/10.1002/adma.200600929
Publication status	Published - 1 Feb 2007
Externally published	Yes

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10.1002/adma.200600929

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title = "Interface-controlled, high-mobility organic transistors",

abstract = "The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.",

author = "Jurchescu, {Oana D.} and Mihaita Popinciuc and {van Wees}, {Bart J.} and Palstra, {Thomas T.M.}",

year = "2007",

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doi = "10.1002/adma.200600929",

language = "English",

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journal = "Advanced materials",

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AU - Jurchescu, Oana D.

AU - Popinciuc, Mihaita

AU - van Wees, Bart J.

AU - Palstra, Thomas T.M.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

AB - The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

U2 - 10.1002/adma.200600929

DO - 10.1002/adma.200600929

M3 - Article

SN - 0935-9648

VL - 19

SP - 688

EP - 692

JO - Advanced materials

JF - Advanced materials

ER -

Interface-controlled, high-mobility organic transistors

Abstract

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