Interface-controlled, high-mobility organic transistors

Oana D. Jurchescu, Mihaita Popinciuc, Bart J. van Wees, Thomas T.M. Palstra

Research output: Contribution to journalArticleAcademicpeer-review

294 Citations (Scopus)

Abstract

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.
Original languageEnglish
Pages (from-to)688-692
Number of pages5
JournalAdvanced materials
Volume19
DOIs
Publication statusPublished - 1 Feb 2007
Externally publishedYes

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Field effect transistors
Transistors
Organic conductors
Interface states
Single crystals
Impurities
Semiconductor materials
Molecules

Cite this

Jurchescu, Oana D. ; Popinciuc, Mihaita ; van Wees, Bart J. ; Palstra, Thomas T.M. . / Interface-controlled, high-mobility organic transistors. In: Advanced materials. 2007 ; Vol. 19. pp. 688-692.
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Interface-controlled, high-mobility organic transistors. / Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T.M. .

In: Advanced materials, Vol. 19, 01.02.2007, p. 688-692.

Research output: Contribution to journalArticleAcademicpeer-review

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