Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

Mark Huijben

Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

Research output: Thesis › PhD Thesis - Research UT, graduation UT

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Abstract

The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band insulators.

Original language	English
Awarding Institution	University of Twente
Supervisors/Advisors	Hilgenkamp, H., Supervisor Blank, D.H.A., Supervisor Rijnders, Guus, Co-Supervisor
Award date	28 Apr 2006
Place of Publication	Enschede
Publisher	University of Twente
Print ISBNs	9789036523516
Publication status	Published - 28 Apr 2006

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Thesis M. HuijbenFinal published version, 18.7 MB

https://www.persistent-identifier.nl/urn:nbn:nl:ui:28-55832

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title = "Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth",

abstract = "The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band insulators.",

author = "Mark Huijben",

year = "2006",

month = apr,

day = "28",

language = "English",

isbn = "9789036523516",

publisher = "University of Twente",

address = "Netherlands",

type = "PhD Thesis - Research UT, graduation UT",

school = "University of Twente",

}

TY - THES

T1 - Interface engineering for oxide electronics

T2 - tuning electronic properties by atomically controlled growth

AU - Huijben, Mark

PY - 2006/4/28

Y1 - 2006/4/28

N2 - The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band insulators.

AB - The main aim of this thesis is to develop a controlled growth with atomic precision for the realization of artificial perovskite structures, to exploit the exceptional physical properties of complex oxide materials such as high-temperature superconductors and conducting interfaces between band insulators.

M3 - PhD Thesis - Research UT, graduation UT

SN - 9789036523516

PB - University of Twente

CY - Enschede

ER -

Interface engineering for oxide electronics: tuning electronic properties by atomically controlled growth

Abstract

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