Interface formation in W/Si multilayers studied by Low Energy Ion Scattering

A. A. Zameshin; R. V. Medvedev; A. E. Yakshin; F. Bijkerk

doi:10.1016/j.tsf.2021.138569

Interface formation in W/Si multilayers studied by Low Energy Ion Scattering

A. A. Zameshin^*, R. V. Medvedev, A. E. Yakshin, F. Bijkerk

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

59 Downloads (Pure)

Abstract

We studied the formation of interfaces in W/Si multilayer structures deposited by magnetron sputtering. In vacuo Low Energy Ion Scattering Spectroscopy was used to determine the materials growth profile with a close to atomic resolution. For that purpose, bi-layer structures, W-on-Si and Si-on-W were grown, with Si being deposited using Ar as the sputter gas and W being deposited in either Ar or Kr. The measurements revealed strongly asymmetric interfaces, with W-on-Si being significantly broader than Si-on-W. However, no difference was found in the W-on-Si interface width depending on the sputter gas, Ar or Kr, used for W deposition, suggesting that it is not a ballistic effect of the backscattered gas ions that is responsible for the wider W-on-Si interface. However, strong surface segregation of Si atoms upon the deposition of W in Kr on Si was observed. Mechanisms responsible for the observed effects are discussed.

Original language	English
Article number	138569
Journal	Thin solid films
Volume	724
DOIs	https://doi.org/10.1016/j.tsf.2021.138569
Publication status	Published - 30 Apr 2021

Keywords

UT-Hybrid-D

Access to Document

10.1016/j.tsf.2021.138569Licence: CC BY

Zameshin-2021-Interface-formation-in-w-si-multilaFinal published version, 1.01 MBLicence: CC BY

Cite this

@article{7eac58d7e7f84e449ebf4e2a3c3f9107,

title = "Interface formation in W/Si multilayers studied by Low Energy Ion Scattering",

abstract = "We studied the formation of interfaces in W/Si multilayer structures deposited by magnetron sputtering. In vacuo Low Energy Ion Scattering Spectroscopy was used to determine the materials growth profile with a close to atomic resolution. For that purpose, bi-layer structures, W-on-Si and Si-on-W were grown, with Si being deposited using Ar as the sputter gas and W being deposited in either Ar or Kr. The measurements revealed strongly asymmetric interfaces, with W-on-Si being significantly broader than Si-on-W. However, no difference was found in the W-on-Si interface width depending on the sputter gas, Ar or Kr, used for W deposition, suggesting that it is not a ballistic effect of the backscattered gas ions that is responsible for the wider W-on-Si interface. However, strong surface segregation of Si atoms upon the deposition of W in Kr on Si was observed. Mechanisms responsible for the observed effects are discussed.",

keywords = "UT-Hybrid-D",

author = "Zameshin, {A. A.} and Medvedev, {R. V.} and Yakshin, {A. E.} and F. Bijkerk",

note = "Elsevier deal",

year = "2021",

month = apr,

day = "30",

doi = "10.1016/j.tsf.2021.138569",

language = "English",

volume = "724",

journal = "Thin solid films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Interface formation in W/Si multilayers studied by Low Energy Ion Scattering

AU - Zameshin, A. A.

AU - Medvedev, R. V.

AU - Yakshin, A. E.

AU - Bijkerk, F.

N1 - Elsevier deal

PY - 2021/4/30

Y1 - 2021/4/30

N2 - We studied the formation of interfaces in W/Si multilayer structures deposited by magnetron sputtering. In vacuo Low Energy Ion Scattering Spectroscopy was used to determine the materials growth profile with a close to atomic resolution. For that purpose, bi-layer structures, W-on-Si and Si-on-W were grown, with Si being deposited using Ar as the sputter gas and W being deposited in either Ar or Kr. The measurements revealed strongly asymmetric interfaces, with W-on-Si being significantly broader than Si-on-W. However, no difference was found in the W-on-Si interface width depending on the sputter gas, Ar or Kr, used for W deposition, suggesting that it is not a ballistic effect of the backscattered gas ions that is responsible for the wider W-on-Si interface. However, strong surface segregation of Si atoms upon the deposition of W in Kr on Si was observed. Mechanisms responsible for the observed effects are discussed.

AB - We studied the formation of interfaces in W/Si multilayer structures deposited by magnetron sputtering. In vacuo Low Energy Ion Scattering Spectroscopy was used to determine the materials growth profile with a close to atomic resolution. For that purpose, bi-layer structures, W-on-Si and Si-on-W were grown, with Si being deposited using Ar as the sputter gas and W being deposited in either Ar or Kr. The measurements revealed strongly asymmetric interfaces, with W-on-Si being significantly broader than Si-on-W. However, no difference was found in the W-on-Si interface width depending on the sputter gas, Ar or Kr, used for W deposition, suggesting that it is not a ballistic effect of the backscattered gas ions that is responsible for the wider W-on-Si interface. However, strong surface segregation of Si atoms upon the deposition of W in Kr on Si was observed. Mechanisms responsible for the observed effects are discussed.

KW - UT-Hybrid-D

UR - http://www.scopus.com/inward/record.url?scp=85102600781&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2021.138569

DO - 10.1016/j.tsf.2021.138569

M3 - Article

AN - SCOPUS:85102600781

VL - 724

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

M1 - 138569

ER -

Interface formation in W/Si multilayers studied by Low Energy Ion Scattering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this