Interface resistance of YBa2Cu3O7−δ/La0.67Sr0.33MnO3 ramp-type contacts

M. van Zalk; A. Brinkman; J. Aarts; H. Hilgenkamp

doi:10.1103/PhysRevB.82.134513

Interface resistance of YBa₂Cu₃O_7−δ/La_0.67Sr_0.33MnO₃ ramp-type contacts

M. van Zalk, A. Brinkman, J. Aarts, H. Hilgenkamp

Interfaces and Correlated Electron Systems

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Abstract

We fabricated and characterized YBa₂Cu₃O_7−δ/La_0.67Sr_0.33MnO₃ (YBCO/LSMO) ramp-type contacts and junctions. An interlayer technique was applied to repair the ramp stoichiometry after etching. It was found that, typically, the resistance of the YBCO/LSMO interface is high compared to the resistances of YBCO interfaces to Au, Pt and the epitaxially grown ferromagnetic oxide SrRuO₃. The YBCO/LSMO interfaces were characterized electrically and were found to show a large negative, linear magnetoresistance. Electron energy loss spectroscopy experiments do not show a significant oxygen depletion near the YBCO/LSMO interface. Our results indicate that the high interfacial resistance is caused by the effect of charge transfer across the interface. The magnetoresistance suggests that part of the interface resistance is of magnetic origin.

Original language	English
Article number	134513
Journal	Physical review B: Condensed matter and materials physics
Volume	82
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevB.82.134513
Publication status	Published - 2010

Keywords

2023 OA procedure

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10.1103/PhysRevB.82.134513

ArticleFinal published version, 325 KBLicence: Taverne

Cite this

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title = "Interface resistance of YBa2Cu3O7−δ/La0.67Sr0.33MnO3 ramp-type contacts",

abstract = "We fabricated and characterized YBa2Cu3O7−δ/La0.67Sr0.33MnO3 (YBCO/LSMO) ramp-type contacts and junctions. An interlayer technique was applied to repair the ramp stoichiometry after etching. It was found that, typically, the resistance of the YBCO/LSMO interface is high compared to the resistances of YBCO interfaces to Au, Pt and the epitaxially grown ferromagnetic oxide SrRuO3. The YBCO/LSMO interfaces were characterized electrically and were found to show a large negative, linear magnetoresistance. Electron energy loss spectroscopy experiments do not show a significant oxygen depletion near the YBCO/LSMO interface. Our results indicate that the high interfacial resistance is caused by the effect of charge transfer across the interface. The magnetoresistance suggests that part of the interface resistance is of magnetic origin.",

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T1 - Interface resistance of YBa2Cu3O7−δ/La0.67Sr0.33MnO3 ramp-type contacts

AU - van Zalk, M.

AU - Brinkman, A.

AU - Aarts, J.

AU - Hilgenkamp, H.

PY - 2010

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N2 - We fabricated and characterized YBa2Cu3O7−δ/La0.67Sr0.33MnO3 (YBCO/LSMO) ramp-type contacts and junctions. An interlayer technique was applied to repair the ramp stoichiometry after etching. It was found that, typically, the resistance of the YBCO/LSMO interface is high compared to the resistances of YBCO interfaces to Au, Pt and the epitaxially grown ferromagnetic oxide SrRuO3. The YBCO/LSMO interfaces were characterized electrically and were found to show a large negative, linear magnetoresistance. Electron energy loss spectroscopy experiments do not show a significant oxygen depletion near the YBCO/LSMO interface. Our results indicate that the high interfacial resistance is caused by the effect of charge transfer across the interface. The magnetoresistance suggests that part of the interface resistance is of magnetic origin.

AB - We fabricated and characterized YBa2Cu3O7−δ/La0.67Sr0.33MnO3 (YBCO/LSMO) ramp-type contacts and junctions. An interlayer technique was applied to repair the ramp stoichiometry after etching. It was found that, typically, the resistance of the YBCO/LSMO interface is high compared to the resistances of YBCO interfaces to Au, Pt and the epitaxially grown ferromagnetic oxide SrRuO3. The YBCO/LSMO interfaces were characterized electrically and were found to show a large negative, linear magnetoresistance. Electron energy loss spectroscopy experiments do not show a significant oxygen depletion near the YBCO/LSMO interface. Our results indicate that the high interfacial resistance is caused by the effect of charge transfer across the interface. The magnetoresistance suggests that part of the interface resistance is of magnetic origin.

KW - 2023 OA procedure

U2 - 10.1103/PhysRevB.82.134513

DO - 10.1103/PhysRevB.82.134513

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VL - 82

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