Interface trap density estimation in FinFETs from the subthreshold current

J. Schmitz; B. Kaleli; P. Kuipers; N. van den Berg; S.M. Smits; R.J.E. Hueting

doi:10.1109/ICMTS.2016.7476199

Interface trap density estimation in FinFETs from the subthreshold current

J. Schmitz, B. Kaleli, P. Kuipers, N. van den Berg, S.M. Smits, R.J.E. Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

616 Downloads (Pure)

Abstract

In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.

Original language	English
Title of host publication	2016 International Conference on Microelectronic Test Structures (ICMTS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	164-167
Number of pages	4
ISBN (Electronic)	978-1-4673-8793-4 , 978-1-4673-8792-7
ISBN (Print)	978-1-4673-8791-0
DOIs	https://doi.org/10.1109/ICMTS.2016.7476199
Publication status	Published - 28 Mar 2016
Event	29th International Conference on Microelectronic Test Structures, ICMTS 2016 - Mielparque Yokohama, Yokohama, Japan Duration: 28 Mar 2016 → 31 Mar 2016 Conference number: 29

Publication series

Name	Proceedings International Conference on Microelectronic Test Structures (ICMTS)
Publisher	IEEE
Volume	2016
ISSN (Print)	1071-9032
ISSN (Electronic)	2158-1029

Conference

Conference	29th International Conference on Microelectronic Test Structures, ICMTS 2016
Abbreviated title	ICMTS
Country/Territory	Japan
City	Yokohama
Period	28/03/16 → 31/03/16

Keywords

Interface states
MOS devices
Traps
Complementary MOSFETs (CMOSFETs)
Current
FinFETs

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10.1109/ICMTS.2016.7476199

Schmitz_ICMTS2016Submitted version, 628 KBLicence: Unspecified

Cite this

Schmitz, J., Kaleli, B., Kuipers, P., van den Berg, N., Smits, S. M., & Hueting, R. J. E. (2016). Interface trap density estimation in FinFETs from the subthreshold current. In 2016 International Conference on Microelectronic Test Structures (ICMTS) (pp. 164-167). (Proceedings International Conference on Microelectronic Test Structures (ICMTS); Vol. 2016). IEEE. https://doi.org/10.1109/ICMTS.2016.7476199

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title = "Interface trap density estimation in FinFETs from the subthreshold current",

abstract = "In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.",

keywords = "Interface states, MOS devices, Traps, Complementary MOSFETs (CMOSFETs), Current, FinFETs",

author = "J. Schmitz and B. Kaleli and P. Kuipers and {van den Berg}, N. and S.M. Smits and R.J.E. Hueting",

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doi = "10.1109/ICMTS.2016.7476199",

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Schmitz, J, Kaleli, B, Kuipers, P, van den Berg, N, Smits, SM & Hueting, RJE 2016, Interface trap density estimation in FinFETs from the subthreshold current. in 2016 International Conference on Microelectronic Test Structures (ICMTS). Proceedings International Conference on Microelectronic Test Structures (ICMTS), vol. 2016, IEEE, Piscataway, NJ, pp. 164-167, 29th International Conference on Microelectronic Test Structures, ICMTS 2016, Yokohama, Japan, 28/03/16. https://doi.org/10.1109/ICMTS.2016.7476199

Interface trap density estimation in FinFETs from the subthreshold current. / Schmitz, J.; Kaleli, B.; Kuipers, P. et al.
2016 International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ: IEEE, 2016. p. 164-167 (Proceedings International Conference on Microelectronic Test Structures (ICMTS); Vol. 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Interface trap density estimation in FinFETs from the subthreshold current

AU - Schmitz, J.

AU - Kaleli, B.

AU - Kuipers, P.

AU - van den Berg, N.

AU - Smits, S.M.

AU - Hueting, R.J.E.

N1 - Conference code: 29

PY - 2016/3/28

Y1 - 2016/3/28

N2 - In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.

AB - In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.

KW - Interface states

KW - MOS devices

KW - Traps

KW - Complementary MOSFETs (CMOSFETs)

KW - Current

KW - FinFETs

U2 - 10.1109/ICMTS.2016.7476199

DO - 10.1109/ICMTS.2016.7476199

M3 - Conference contribution

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T3 - Proceedings International Conference on Microelectronic Test Structures (ICMTS)

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EP - 167

BT - 2016 International Conference on Microelectronic Test Structures (ICMTS)

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T2 - 29th International Conference on Microelectronic Test Structures, ICMTS 2016

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ER -

Schmitz J, Kaleli B, Kuipers P, van den Berg N, Smits SM , Hueting RJE. Interface trap density estimation in FinFETs from the subthreshold current. In 2016 International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ: IEEE. 2016. p. 164-167. (Proceedings International Conference on Microelectronic Test Structures (ICMTS)). doi: 10.1109/ICMTS.2016.7476199

Interface trap density estimation in FinFETs from the subthreshold current

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