Interface trap response to RF charge pumping measurements

G.T. Sasse, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.
    Original languageUndefined
    Title of host publicationProceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages427-431
    Number of pages5
    ISBN (Print)978-90-73461-44-4
    Publication statusPublished - 23 Nov 2006
    Event9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands
    Duration: 23 Nov 200624 Nov 2006
    Conference number: 9

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number10

    Workshop

    Workshop9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
    CountryNetherlands
    CityVeldhoven
    Period23/11/0624/11/06

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • IR-63760
    • METIS-237708
    • EWI-8414

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