Abstract
In this paper we will discuss the interface trap response
to CP measurements at RF gate excitation. An explanation
is given on how to accurately perform RF CP measurements,
using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.
Original language | Undefined |
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Title of host publication | Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006 |
Place of Publication | Utrecht, The Netherlands |
Publisher | STW |
Pages | 427-431 |
Number of pages | 5 |
ISBN (Print) | 978-90-73461-44-4 |
Publication status | Published - 23 Nov 2006 |
Event | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9 |
Publication series
Name | |
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Publisher | Technology Foundation STW |
Number | 10 |
Workshop
Workshop | 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 |
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Country/Territory | Netherlands |
City | Veldhoven |
Period | 23/11/06 → 24/11/06 |
Keywords
- SC-ICRY: Integrated Circuit Reliability and Yield
- IR-63760
- METIS-237708
- EWI-8414