Interface trap response to RF charge pumping measurements

G.T. Sasse; Jurriaan Schmitz

Interface trap response to RF charge pumping measurements

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Abstract

In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.

Original language	Undefined
Title of host publication	Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	427-431
Number of pages	5
ISBN (Print)	978-90-73461-44-4
Publication status	Published - 23 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Publication series

Name
Publisher	Technology Foundation STW
Number	10

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country/Territory	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield
IR-63760
METIS-237708
EWI-8414

Access to Document

http://eprints.eemcs.utwente.nl/secure2/8414/01/sasse.pdf

Cite this

@inproceedings{bdcccda8c9e24a4f892e4945f569a622,

title = "Interface trap response to RF charge pumping measurements",

abstract = "In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield, IR-63760, METIS-237708, EWI-8414",

author = "G.T. Sasse and Jurriaan Schmitz",

year = "2006",

month = nov,

day = "23",

language = "Undefined",

isbn = "978-90-73461-44-4",

publisher = "STW",

number = "10",

pages = "427--431",

booktitle = "Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

note = "9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 ; Conference date: 23-11-2006 Through 24-11-2006",

}

Sasse, GT & Schmitz, J 2006, Interface trap response to RF charge pumping measurements. in Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006. STW, Utrecht, The Netherlands, pp. 427-431, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06. <http://eprints.eemcs.utwente.nl/secure2/8414/01/sasse.pdf>

TY - GEN

T1 - Interface trap response to RF charge pumping measurements

AU - Sasse, G.T.

AU - Schmitz, Jurriaan

N1 - Conference code: 9

PY - 2006/11/23

Y1 - 2006/11/23

N2 - In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.

AB - In this paper we will discuss the interface trap response to CP measurements at RF gate excitation. An explanation is given on how to accurately perform RF CP measurements, using an improved technique. Based on the observed response of the pumped charge per cycle with increasing frequencies a model is developed that is able to explain the observed roll-off. It is an extension to the well known classical model and it takes into account both the limited capture rates as well as a distribution of traps in the oxide.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

KW - IR-63760

KW - METIS-237708

KW - EWI-8414

M3 - Conference contribution

SN - 978-90-73461-44-4

SP - 427

EP - 431

BT - Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

CY - Utrecht, The Netherlands

T2 - 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006

Y2 - 23 November 2006 through 24 November 2006

ER -