Abstract
Solar Energy Materials and Solar Cells, 169 (2017) 56-60. doi:10.1016/j.solmat.2017.05.003
Original language | English |
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Pages (from-to) | 56-60 |
Number of pages | 5 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 169 |
DOIs | |
Publication status | Published - 2017 |
Externally published | Yes |
Keywords
- Cr-doped ZnS
- Deep-level intermediate band solar cell
- thermal carrier escape
- Transition-metal-doped semiconductor
- n/a OA procedure