Interpretation of photovoltaic performance of n -ZnO: Al/ZnS:Cr/p-GaP solar cell

Mohammadreza Nematollahi, Esther López, Iñigo Ramiro, Pablo G. Linares, Elisa Antolín, Irene Artacho, César Tablero, Eric Karhu, Turid W. Reenaas, Antonio Martí

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

Solar Energy Materials and Solar Cells, 169 (2017) 56-60. doi:10.1016/j.solmat.2017.05.003
Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume169
DOIs
Publication statusPublished - 2017
Externally publishedYes

Keywords

  • Cr-doped ZnS
  • Deep-level intermediate band solar cell
  • thermal carrier escape
  • Transition-metal-doped semiconductor
  • n/a OA procedure

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