Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators

Sander L.J. Gierkink, Eric A.M. Klumperink, A.P. van der Wel, G. Hoogzaad, Gian Hoogzaad, Adrianus Johannes Maria van Tuijl, Bram Nauta

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    Abstract

    This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching
    Original languageUndefined
    Pages (from-to)1022-1025
    Number of pages4
    JournalIEEE journal of solid-state circuits
    Volume34
    Issue number7
    DOIs
    Publication statusPublished - 1999

    Keywords

    • METIS-111659
    • IR-14534

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