TY - JOUR
T1 - Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators
AU - Gierkink, Sander L.J.
AU - Klumperink, Eric A.M.
AU - van der Wel, Arnoud P.
AU - Hoogzaad, Gian
AU - van Tuijl, Ed J.M.
AU - Nauta, Bram
PY - 1999
Y1 - 1999
N2 - This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching
AB - This paper gives experimental proof of an intriguing physical effect: periodic on-off switching of MOS transistors in a CMOS ring oscillator reduces their intrinsic 1/f noise and hence the oscillator's close-in phase noise. More specifically, it is shown that the 1/f3 phase noise is dependent on the gate-source voltage of the MOS transistors in the off state. Measurement results, corrected for waveform-dependent upconversion and effective bias, show an 8-dB-lower 1/f3 phase noise than expected. It will be shown that this can be attributed to the intrinsic 1/f noise reduction effect due to periodic on-off switching
U2 - 10.1109/4.772418
DO - 10.1109/4.772418
M3 - Article
SN - 0018-9200
VL - 34
SP - 1022
EP - 1025
JO - IEEE journal of solid-state circuits
JF - IEEE journal of solid-state circuits
IS - 7
ER -