Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies

G. Drera, G. Salvinelli, F. Bondino, E. Magnano, Mark Huijben, Alexander Brinkman, L. Sangaletti

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Abstract

The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO 3 and SrTiO 3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO 3 ) interface.
Original languageEnglish
Article number035124
Pages (from-to)-
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume90
Issue number3
DOIs
Publication statusPublished - 2014

Keywords

  • METIS-304628
  • IR-91528

Fingerprint Dive into the research topics of 'Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies'. Together they form a unique fingerprint.

  • Cite this