Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies

G. Drera, G. Salvinelli, F. Bondino, E. Magnano, Mark Huijben, Alexander Brinkman, L. Sangaletti

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO 3 and SrTiO 3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO 3 ) interface.
Original languageEnglish
Article number035124
Pages (from-to)-
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume90
Issue number3
DOIs
Publication statusPublished - 2014

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Interface states
Valence bands
Heterojunctions
heterojunctions
Electronic states
Spectroscopy
spectroscopy
valence
Two dimensional electron gas
Photoemission
notches
electronics
photoelectric emission
diagrams
strontium titanium oxide
conduction
Experiments
augmentation
estimates
profiles

Keywords

  • METIS-304628
  • IR-91528

Cite this

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title = "Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies",
abstract = "The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO 3 and SrTiO 3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO 3 ) interface.",
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author = "G. Drera and G. Salvinelli and F. Bondino and E. Magnano and Mark Huijben and Alexander Brinkman and L. Sangaletti",
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doi = "10.1103/PhysRevB.90.035124",
language = "English",
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pages = "--",
journal = "Physical review B: Covering condensed matter and materials physics",
issn = "2469-9950",
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Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies. / Drera, G.; Salvinelli, G.; Bondino, F.; Magnano, E.; Huijben, Mark; Brinkman, Alexander; Sangaletti, L.

In: Physical Review B (Condensed Matter and Materials Physics), Vol. 90, No. 3, 035124, 2014, p. -.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Intrinsic origin of interface states and band offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies

AU - Drera, G.

AU - Salvinelli, G.

AU - Bondino, F.

AU - Magnano, E.

AU - Huijben, Mark

AU - Brinkman, Alexander

AU - Sangaletti, L.

PY - 2014

Y1 - 2014

N2 - The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO 3 and SrTiO 3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO 3 ) interface.

AB - The origin of electronic states at the basis of the 2DEG found in conducting LaAlO 3 /SrTiO 3 interfaces (5 u.c. LaAlO 3 ) is investigated by resonant photoemission experiments at the Ti L 2,3 and La M 4,5 edges. As shown by the resonant enhancement at the Ti L 2,3 edge, electronic states at E F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO 3 and SrTiO 3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO 3 ) interface.

KW - METIS-304628

KW - IR-91528

U2 - 10.1103/PhysRevB.90.035124

DO - 10.1103/PhysRevB.90.035124

M3 - Article

VL - 90

SP - -

JO - Physical review B: Covering condensed matter and materials physics

JF - Physical review B: Covering condensed matter and materials physics

SN - 2469-9950

IS - 3

M1 - 035124

ER -