Introduction of ramp-type technology in HTS quasiparticle injection devices

R. Moerman, D. Veldhuis, G.J. Gerritsma, H. Rogalla

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
29 Downloads (Pure)

Abstract

Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.
Original languageEnglish
Pages (from-to)3644-3647
Number of pages4
JournalIEEE transactions on applied superconductivity
Volume9
Issue number2
DOIs
Publication statusPublished - 1999

Fingerprint

ramps
injection
Experiments
Electrodes
Geometry
compatibility
strip
retarding
electrodes
geometry
energy

Cite this

@article{94bb777217de4f0e88f762673890a43a,
title = "Introduction of ramp-type technology in HTS quasiparticle injection devices",
abstract = "Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.",
author = "R. Moerman and D. Veldhuis and G.J. Gerritsma and H. Rogalla",
year = "1999",
doi = "10.1109/77.783818",
language = "English",
volume = "9",
pages = "3644--3647",
journal = "IEEE transactions on applied superconductivity",
issn = "1051-8223",
publisher = "IEEE",
number = "2",

}

Introduction of ramp-type technology in HTS quasiparticle injection devices. / Moerman, R.; Veldhuis, D.; Gerritsma, G.J.; Rogalla, H.

In: IEEE transactions on applied superconductivity, Vol. 9, No. 2, 1999, p. 3644-3647.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Introduction of ramp-type technology in HTS quasiparticle injection devices

AU - Moerman, R.

AU - Veldhuis, D.

AU - Gerritsma, G.J.

AU - Rogalla, H.

PY - 1999

Y1 - 1999

N2 - Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.

AB - Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.

U2 - 10.1109/77.783818

DO - 10.1109/77.783818

M3 - Article

VL - 9

SP - 3644

EP - 3647

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

SN - 1051-8223

IS - 2

ER -