Inverse SiGe heterojunction bipolar transistor

L. C M Van Den Oever; L. K. Nanver; C. C G Visser; T. L M Scholtes; R. J E Hueting; J. Slotboom

doi:10.1109/ESSDERC.1997.194485

Inverse SiGe heterojunction bipolar transistor

L. C M Van Den Oever^*, L. K. Nanver, C. C G Visser, T. L M Scholtes, R. J E Hueting, J. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

Advanced epitaxial technology has been combined with straightforward, conventional processing to fabricate an emitter-down/collector-up SiGe HBT with both high performance and low-cost potentials. Particularly the fmax is enhanced by the minimization of the collector-base capacitance.

Original language	English
Title of host publication	27th European Solid-State Device Research Conference 1997
Editors	H. Grunbacher
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	540-543
Number of pages	4
ISBN (Print)	2-86332-221-4
DOIs	https://doi.org/10.1109/ESSDERC.1997.194485
Publication status	Published - 1 Jan 1997
Externally published	Yes
Event	27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany Duration: 22 Sept 1997 → 24 Sept 1997 Conference number: 27

Conference

Conference	27th European Solid-State Device Research Conference, ESSDERC 1997
Abbreviated title	ESSDERC 1997
Country/Territory	Germany
City	Stuttgart
Period	22/09/97 → 24/09/97

Access to Document

10.1109/ESSDERC.1997.194485

https://ieeexplore.ieee.org/document/1503415

Cite this

@inproceedings{5fbe4ea824bc40ea83bce83827582a29,

title = "Inverse SiGe heterojunction bipolar transistor",

abstract = "Advanced epitaxial technology has been combined with straightforward, conventional processing to fabricate an emitter-down/collector-up SiGe HBT with both high performance and low-cost potentials. Particularly the fmax is enhanced by the minimization of the collector-base capacitance.",

author = "{Van Den Oever}, {L. C M} and Nanver, {L. K.} and Visser, {C. C G} and Scholtes, {T. L M} and Hueting, {R. J E} and J. Slotboom",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.1997.194485",

language = "English",

isbn = "2-86332-221-4",

pages = "540--543",

editor = "H. Grunbacher",

booktitle = "27th European Solid-State Device Research Conference 1997",

publisher = "IEEE",

address = "United States",

note = "27th European Solid-State Device Research Conference, ESSDERC 1997, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",

}

Van Den Oever, LCM, Nanver, LK, Visser, CCG, Scholtes, TLM, Hueting, RJE & Slotboom, J 1997, Inverse SiGe heterojunction bipolar transistor. in H Grunbacher (ed.), 27th European Solid-State Device Research Conference 1997. IEEE, Piscataway, NJ, pp. 540-543, 27th European Solid-State Device Research Conference, ESSDERC 1997, Stuttgart, Germany, 22/09/97. https://doi.org/10.1109/ESSDERC.1997.194485

TY - GEN

T1 - Inverse SiGe heterojunction bipolar transistor

AU - Van Den Oever, L. C M

AU - Nanver, L. K.

AU - Visser, C. C G

AU - Scholtes, T. L M

AU - Hueting, R. J E

AU - Slotboom, J.

N1 - Conference code: 27

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Advanced epitaxial technology has been combined with straightforward, conventional processing to fabricate an emitter-down/collector-up SiGe HBT with both high performance and low-cost potentials. Particularly the fmax is enhanced by the minimization of the collector-base capacitance.

AB - Advanced epitaxial technology has been combined with straightforward, conventional processing to fabricate an emitter-down/collector-up SiGe HBT with both high performance and low-cost potentials. Particularly the fmax is enhanced by the minimization of the collector-base capacitance.

UR - http://www.scopus.com/inward/record.url?scp=0003234182&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.1997.194485

DO - 10.1109/ESSDERC.1997.194485

M3 - Conference contribution

AN - SCOPUS:0003234182

SN - 2-86332-221-4

SP - 540

EP - 543

BT - 27th European Solid-State Device Research Conference 1997

A2 - Grunbacher, H.

PB - IEEE

CY - Piscataway, NJ

T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997

Y2 - 22 September 1997 through 24 September 1997

ER -

Inverse SiGe heterojunction bipolar transistor

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this