Inverse SiGe heterojunction bipolar transistor

L. C M Van Den Oever*, L. K. Nanver, C. C G Visser, T. L M Scholtes, R. J E Hueting, J. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

Advanced epitaxial technology has been combined with straightforward, conventional processing to fabricate an emitter-down/collector-up SiGe HBT with both high performance and low-cost potentials. Particularly the fmax is enhanced by the minimization of the collector-base capacitance.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsH. Grunbacher
PublisherIEEE Computer Society Press
Pages540-543
Number of pages4
ISBN (Electronic)2863322214
DOIs
Publication statusPublished - 1 Jan 1997
Externally publishedYes
Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
Duration: 22 Sep 199724 Sep 1997
Conference number: 27

Conference

Conference27th European Solid-State Device Research Conference, ESSDERC 1997
Abbreviated titleESSDERC 1997
CountryGermany
CityStuttgart
Period22/09/9724/09/97

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