Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

J.S. Kolhatkar, E. Hoekstra, A.J. Hof, C. Salm, H. Wallinga, J. Schmitz

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    Abstract

    Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.
    Original languageEnglish
    Title of host publicationProceedings SAFE & ProRISC 2004
    Place of PublicationUtrecht
    PublisherSTW
    Pages700-703
    Number of pages4
    ISBN (Print)90-73461-43-X
    Publication statusPublished - 25 Nov 2004
    EventAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 - Veldhoven, Netherlands
    Duration: 25 Nov 200426 Nov 2004

    Workshop

    WorkshopAnnual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period25/11/0426/11/04

    Keywords

    • Hot-carrier degradation
    • MOSFETs
    • Low frequency
    • Noise
    • Switched biasing
    • Deuterium/hydrogen post-metal anneal

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