Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

J.S. Kolhatkar; E. Hoekstra; A.J. Hof; C. Salm; H. Wallinga; J. Schmitz

Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

J.S. Kolhatkar, E. Hoekstra, A.J. Hof, C. Salm, H. Wallinga, J. Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.

Original language	English
Title of host publication	Proceedings SAFE & ProRISC 2004
Place of Publication	Utrecht
Publisher	STW
Pages	700-703
Number of pages	4
ISBN (Print)	90-73461-43-X
Publication status	Published - 25 Nov 2004
Event	Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004 - Veldhoven, Netherlands Duration: 25 Nov 2004 → 26 Nov 2004

Workshop

Workshop	Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/04 → 26/11/04

Keywords

Hot-carrier degradation
MOSFETs
Low frequency
Noise
Switched biasing
Deuterium/hydrogen post-metal anneal

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title = "Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements",

abstract = "Periodically switching the MOSFET {\textquoteleft}off{\textquoteright} (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.",

keywords = "Hot-carrier degradation, MOSFETs, Low frequency, Noise, Switched biasing, Deuterium/hydrogen post-metal anneal",

author = "J.S. Kolhatkar and E. Hoekstra and A.J. Hof and C. Salm and H. Wallinga and J. Schmitz",

year = "2004",

month = nov,

day = "25",

language = "English",

isbn = "90-73461-43-X",

pages = "700--703",

booktitle = "Proceedings SAFE & ProRISC 2004",

publisher = "STW",

note = "Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004, SAFE ; Conference date: 25-11-2004 Through 26-11-2004",

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TY - GEN

T1 - Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

AU - Kolhatkar, J.S.

AU - Hoekstra, E.

AU - Hof, A.J.

AU - Salm, C.

AU - Wallinga, H.

AU - Schmitz, J.

PY - 2004/11/25

Y1 - 2004/11/25

N2 - Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.

AB - Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.

KW - Hot-carrier degradation

KW - MOSFETs

KW - Low frequency

KW - Noise

KW - Switched biasing

KW - Deuterium/hydrogen post-metal anneal

M3 - Conference contribution

SN - 90-73461-43-X

SP - 700

EP - 703

BT - Proceedings SAFE & ProRISC 2004

PB - STW

CY - Utrecht

T2 - Annual Workshop on Semiconductor Advances for Future Electronics, SAFE 2004

Y2 - 25 November 2004 through 26 November 2004

ER -

Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

Abstract

Workshop

Keywords

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