Investigation of impurity related phenomena, significant for novel semiconductor technologies

Franciscus Petrus Widdershoven

Investigation of impurity related phenomena, significant for novel semiconductor technologies

Franciscus Petrus Widdershoven

Physics of Interfaces and Nanomaterials

Research output: Thesis › PhD Thesis - Research UT, graduation external

Abstract

The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.

Original language	English
Awarding Institution	University of Twente
Supervisors/Advisors	Pals, J.A., Supervisor
Award date	8 Feb 1991
Place of Publication	Enschede
Publisher	Universiteit Twente
Publication status	Published - 8 Feb 1991

Keywords

METIS-128288

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title = "Investigation of impurity related phenomena, significant for novel semiconductor technologies",

abstract = "The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.",

keywords = "METIS-128288",

author = "Widdershoven, {Franciscus Petrus}",

year = "1991",

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day = "8",

language = "English",

publisher = "Universiteit Twente",

school = "University of Twente",

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TY - THES

T1 - Investigation of impurity related phenomena, significant for novel semiconductor technologies

AU - Widdershoven, Franciscus Petrus

PY - 1991/2/8

Y1 - 1991/2/8

N2 - The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.

AB - The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.

KW - METIS-128288

M3 - PhD Thesis - Research UT, graduation external

PB - Universiteit Twente

CY - Enschede

ER -