Investigation of impurity related phenomena, significant for novel semiconductor technologies

Franciscus Petrus Widdershoven

Research output: Thesis › PhD Thesis - Research UT, graduation external › Academic

Abstract

The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.
Original languageEnglish
Awarding Institution
  • University of Twente
Supervisors/Advisors
  • Pals, J.A., Supervisor
Award date8 Feb 1991
Place of PublicationEnschede
Publisher
Publication statusPublished - 8 Feb 1991

Fingerprint

impurities
electron mobility
silicon
erbium
gallium
wafers
fabrication
temperature

Keywords

  • METIS-128288

Cite this

Widdershoven, F. P. (1991). Investigation of impurity related phenomena, significant for novel semiconductor technologies. Enschede: Universiteit Twente.
Widdershoven, Franciscus Petrus. / Investigation of impurity related phenomena, significant for novel semiconductor technologies. Enschede : Universiteit Twente, 1991. 111 p.
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abstract = "The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.",
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Widdershoven, FP 1991, 'Investigation of impurity related phenomena, significant for novel semiconductor technologies', University of Twente, Enschede.

Investigation of impurity related phenomena, significant for novel semiconductor technologies. / Widdershoven, Franciscus Petrus.

Enschede : Universiteit Twente, 1991. 111 p.

Research output: Thesis › PhD Thesis - Research UT, graduation external › Academic

TY - THES

T1 - Investigation of impurity related phenomena, significant for novel semiconductor technologies

AU - Widdershoven, Franciscus Petrus

PY - 1991/2/8

Y1 - 1991/2/8

N2 - The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.

AB - The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.

KW - METIS-128288

M3 - PhD Thesis - Research UT, graduation external

PB - Universiteit Twente

CY - Enschede

ER -

Widdershoven FP. Investigation of impurity related phenomena, significant for novel semiconductor technologies. Enschede: Universiteit Twente, 1991. 111 p.