Abstract
The introduction of impurities into semiconductor materials during fabrication is addressed. Some phenomena related to the presence of such impurities are investigated. An investigation of the properties of erbium doped silicon is described, and the characterization, by several analysis techniques, of the interface between directly bonded n-type silicon wafers is reported. A theory describing the influence of correlation on electron mobility (between the positions of impurities within impurity clusters) is presented. The theory is applied to calculate the electron mobility of gallium arsenide in the presence of clusters of correlated impurities at a temperature of 77 K. This correlation is shown to have a significant influence on the mobility.
| Original language | English |
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| Award date | 8 Feb 1991 |
| Place of Publication | Enschede |
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| Publication status | Published - 8 Feb 1991 |