Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

Vasilisa Veligura; Gregor Hlawacek; Raoul van Gastel; Harold J.W. Zandvliet; Bene Poelsema

doi:10.1016/j.jlumin.2014.09.016

Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

Vasilisa Veligura^*, Gregor Hlawacek, Raoul van Gastel, Harold J.W. Zandvliet, Bene Poelsema

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He⁺ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified.

Original language	English
Pages (from-to)	321-326
Number of pages	6
Journal	Journal of luminescence
Volume	157
DOIs	https://doi.org/10.1016/j.jlumin.2014.09.016
Publication status	Published - Jan 2015

Keywords

Helium ion microscopy
Ionoluminescence
Nanowires
Quatum dots
Semiconductors
2023 OA procedure

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10.1016/j.jlumin.2014.09.016

ArticleFinal published version, 1.81 MBLicence: Taverne

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@article{5e9b257c3817433daefdb8e1df7c3cd3,

title = "Investigation of ionoluminescence of semiconductor materials using helium ion microscopy",

abstract = "Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He+ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified.",

keywords = "Helium ion microscopy, Ionoluminescence, Nanowires, Quatum dots, Semiconductors, 2023 OA procedure",

author = "Vasilisa Veligura and Gregor Hlawacek and {van Gastel}, Raoul and Zandvliet, {Harold J.W.} and Bene Poelsema",

note = "Funding Information: This research is supported by the Dutch Technology Foundation STW , which is part of the Netherlands Organization for Scientific Research (NWO) , and which is partly funded by the Ministry of Economic Affairs . Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2015",

month = jan,

doi = "10.1016/j.jlumin.2014.09.016",

language = "English",

volume = "157",

pages = "321--326",

journal = "Journal of luminescence",

issn = "0022-2313",

publisher = "Elsevier",

}

TY - JOUR

T1 - Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

AU - Veligura, Vasilisa

AU - Hlawacek, Gregor

AU - van Gastel, Raoul

AU - Zandvliet, Harold J.W.

AU - Poelsema, Bene

N1 - Funding Information: This research is supported by the Dutch Technology Foundation STW , which is part of the Netherlands Organization for Scientific Research (NWO) , and which is partly funded by the Ministry of Economic Affairs . Publisher Copyright: © 2014 Elsevier B.V.

PY - 2015/1

Y1 - 2015/1

N2 - Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He+ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified.

AB - Helium ion microscopy has been employed to investigate the ionoluminescence of various semiconductors. We have verified the possibility of application of this technique for high-resolution ionoluminescence analysis of this kind of materials. In this work the ionoluminescence signal was induced by a sub-nanometer He+ beam with an energy of 35 keV. Several types of semiconductor samples were investigated: bulk materials, nanowires and quantum dots. All samples were found to exhibit ionoluminescence. However, the ionoluminescence signal rapidly degrades under the ion irradiation. The signal degradation was found to depend not only on the sample's composition, but also on its size. The ionoluminescence emission spectra were recorded and emission peaks identified.

KW - Helium ion microscopy

KW - Ionoluminescence

KW - Nanowires

KW - Quatum dots

KW - Semiconductors

KW - 2023 OA procedure

UR - http://www.scopus.com/inward/record.url?scp=84907637496&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2014.09.016

DO - 10.1016/j.jlumin.2014.09.016

M3 - Article

SN - 0022-2313

VL - 157

SP - 321

EP - 326

JO - Journal of luminescence

JF - Journal of luminescence

ER -

Investigation of ionoluminescence of semiconductor materials using helium ion microscopy

Abstract

Keywords

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