Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver; M. Krakers; Tihomir  Knezevic; A. Karavidas; Ievgen  Boturchuk; Vishal  Agarwal; Raymond Josephus Engelbart Hueting; Satadal  Dutta; Anne J. Annema

doi:10.1117/12.2501598

Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver, M. Krakers, Tihomir Knezevic, A. Karavidas, Ievgen Boturchuk, Vishal Agarwal, Raymond Josephus Engelbart Hueting, Satadal Dutta, Anne J. Annema

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

Original language	English
Title of host publication	Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018
Publisher	SPIE International
Volume	11043
DOIs	https://doi.org/10.1117/12.2501598
Publication status	Published - 8 Oct 2018
Event	Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa Duration: 8 Oct 2018 → 10 Oct 2018 Conference number: 5 https://www.regonline.com/builder/site/default.aspx?EventID=2019712

Conference

Conference	Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018
Abbreviated title	SMEOS 2018
Country	South Africa
City	Skukuza
Period	8/10/18 → 10/10/18
Internet address	https://www.regonline.com/builder/site/default.aspx?EventID=2019712

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Nanver, L. K., Krakers, M., Knezevic, T., Karavidas, A., Boturchuk, I., Agarwal, V., ... Annema, A. J. (2018). Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. In Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018 (Vol. 11043). SPIE International. https://doi.org/10.1117/12.2501598

Nanver, Lis Karen ; Krakers, M. ; Knezevic, Tihomir ; Karavidas, A. ; Boturchuk, Ievgen ; Agarwal, Vishal ; Hueting, Raymond Josephus Engelbart ; Dutta, Satadal ; Annema, Anne J. / Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043 SPIE International, 2018.

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title = "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices",

abstract = "The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.",

author = "Nanver, {Lis Karen} and M. Krakers and Tihomir Knezevic and A. Karavidas and Ievgen Boturchuk and Vishal Agarwal and Hueting, {Raymond Josephus Engelbart} and Satadal Dutta and Annema, {Anne J.}",

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doi = "10.1117/12.2501598",

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booktitle = "Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018",

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Nanver, LK , Krakers, M, Knezevic, T, Karavidas, A, Boturchuk, I, Agarwal, V, Hueting, RJE, Dutta, S & Annema, AJ 2018, Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. in Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. vol. 11043, SPIE International, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018, Skukuza, South Africa, 8/10/18. https://doi.org/10.1117/12.2501598

Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. / Nanver, Lis Karen ; Krakers, M.; Knezevic, Tihomir ; Karavidas, A.; Boturchuk, Ievgen ; Agarwal, Vishal ; Hueting, Raymond Josephus Engelbart; Dutta, Satadal ; Annema, Anne J.

Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043 SPIE International, 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

AU - Nanver, Lis Karen

AU - Krakers, M.

AU - Knezevic, Tihomir

AU - Karavidas, A.

AU - Boturchuk, Ievgen

AU - Agarwal, Vishal

AU - Hueting, Raymond Josephus Engelbart

AU - Dutta, Satadal

AU - Annema, Anne J.

PY - 2018/10/8

Y1 - 2018/10/8

N2 - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

AB - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

U2 - 10.1117/12.2501598

DO - 10.1117/12.2501598

M3 - Conference contribution

VL - 11043

BT - Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018

PB - SPIE International

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10.1117/12.2501598