Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver, M. Krakers, Tihomir Knezevic, A. Karavidas, Ievgen Boturchuk, Vishal Agarwal, Raymond Josephus Engelbart Hueting, Satadal Dutta, Anne J. Annema

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Abstract

The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
Original languageEnglish
Title of host publicationFifth Conference on Sensors, MEMS and Electro-Optical Systems 2018
PublisherSPIE International
Volume11043
DOIs
Publication statusPublished - 8 Oct 2018
EventFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa
Duration: 8 Oct 201810 Oct 2018
Conference number: 5
https://www.regonline.com/builder/site/default.aspx?EventID=2019712

Conference

ConferenceFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018
Abbreviated titleSMEOS 2018
CountrySouth Africa
CitySkukuza
Period8/10/1810/10/18
Internet address

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avalanche diodes
avalanches
light emission
defects
photons
photodiodes
diodes
data transmission
dark current
electrical faults
integrated circuits
high current
CMOS
light emitting diodes
breakdown
electric potential
silicon
profiles

Cite this

Nanver, L. K., Krakers, M., Knezevic, T., Karavidas, A., Boturchuk, I., Agarwal, V., ... Annema, A. J. (2018). Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. In Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018 (Vol. 11043). SPIE International. https://doi.org/10.1117/12.2501598
Nanver, Lis Karen ; Krakers, M. ; Knezevic, Tihomir ; Karavidas, A. ; Boturchuk, Ievgen ; Agarwal, Vishal ; Hueting, Raymond Josephus Engelbart ; Dutta, Satadal ; Annema, Anne J. / Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043 SPIE International, 2018.
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title = "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices",
abstract = "The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.",
author = "Nanver, {Lis Karen} and M. Krakers and Tihomir Knezevic and A. Karavidas and Ievgen Boturchuk and Vishal Agarwal and Hueting, {Raymond Josephus Engelbart} and Satadal Dutta and Annema, {Anne J.}",
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booktitle = "Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018",
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Nanver, LK, Krakers, M, Knezevic, T, Karavidas, A, Boturchuk, I, Agarwal, V, Hueting, RJE, Dutta, S & Annema, AJ 2018, Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. in Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. vol. 11043, SPIE International, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018, Skukuza, South Africa, 8/10/18. https://doi.org/10.1117/12.2501598

Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. / Nanver, Lis Karen; Krakers, M.; Knezevic, Tihomir ; Karavidas, A.; Boturchuk, Ievgen ; Agarwal, Vishal ; Hueting, Raymond Josephus Engelbart; Dutta, Satadal ; Annema, Anne J.

Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043 SPIE International, 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

AU - Nanver, Lis Karen

AU - Krakers, M.

AU - Knezevic, Tihomir

AU - Karavidas, A.

AU - Boturchuk, Ievgen

AU - Agarwal, Vishal

AU - Hueting, Raymond Josephus Engelbart

AU - Dutta, Satadal

AU - Annema, Anne J.

PY - 2018/10/8

Y1 - 2018/10/8

N2 - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

AB - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

U2 - 10.1117/12.2501598

DO - 10.1117/12.2501598

M3 - Conference contribution

VL - 11043

BT - Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018

PB - SPIE International

ER -

Nanver LK, Krakers M, Knezevic T, Karavidas A, Boturchuk I, Agarwal V et al. Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. In Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043. SPIE International. 2018 https://doi.org/10.1117/12.2501598