Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver, M. Krakers, Tihomir Knezevic, A. Karavidas, Ievgen Boturchuk, Vishal Agarwal, Raymond Josephus Engelbart Hueting, Satadal Dutta, Anne J. Annema

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
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    Abstract

    The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
    Original languageEnglish
    Title of host publicationFifth Conference on Sensors, MEMS and Electro-Optical Systems 2018
    PublisherSPIE International
    Volume11043
    DOIs
    Publication statusPublished - 8 Oct 2018
    EventFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa
    Duration: 8 Oct 201810 Oct 2018
    Conference number: 5
    https://www.regonline.com/builder/site/default.aspx?EventID=2019712

    Conference

    ConferenceFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018
    Abbreviated titleSMEOS 2018
    CountrySouth Africa
    CitySkukuza
    Period8/10/1810/10/18
    Internet address

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