Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver; M. Krakers; Tihomir  Knezevic; A. Karavidas; Ievgen  Boturchuk; Vishal  Agarwal; Raymond Josephus Engelbart Hueting; Satadal  Dutta; Anne J. Annema

doi:10.1117/12.2501598

Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Lis Karen Nanver, M. Krakers, Tihomir Knezevic, A. Karavidas, Ievgen Boturchuk, Vishal Agarwal, Raymond Josephus Engelbart Hueting, Satadal Dutta, Anne J. Annema

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

45 Downloads (Pure)

Abstract

The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

Original language	English
Title of host publication	Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018
Publisher	SPIE
Volume	11043
DOIs	https://doi.org/10.1117/12.2501598
Publication status	Published - 8 Oct 2018
Event	Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa Duration: 8 Oct 2018 → 10 Oct 2018 Conference number: 5 https://www.regonline.com/builder/site/default.aspx?EventID=2019712

Conference

Conference	Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018
Abbreviated title	SMEOS 2018
Country/Territory	South Africa
City	Skukuza
Period	8/10/18 → 10/10/18
Internet address	https://www.regonline.com/builder/site/default.aspx?EventID=2019712

Access to Document

10.1117/12.2501598

Cite this

@inproceedings{e781f821d6444255ae804efd01331a1e,

title = "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices",

abstract = "The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes. ",

author = "Nanver, {Lis Karen} and M. Krakers and Tihomir Knezevic and A. Karavidas and Ievgen Boturchuk and Vishal Agarwal and Hueting, {Raymond Josephus Engelbart} and Satadal Dutta and Annema, {Anne J.}",

year = "2018",

month = oct,

day = "8",

doi = "10.1117/12.2501598",

language = "English",

volume = "11043",

booktitle = "Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018",

publisher = "SPIE",

address = "United States",

note = "Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018, SMEOS 2018 ; Conference date: 08-10-2018 Through 10-10-2018",

url = "https://www.regonline.com/builder/site/default.aspx?EventID=2019712",

}

Nanver, LK, Krakers, M, Knezevic, T, Karavidas, A, Boturchuk, I, Agarwal, V, Hueting, RJE, Dutta, S & Annema, AJ 2018, Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. in Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. vol. 11043, SPIE, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018, Skukuza, South Africa, 8/10/18. https://doi.org/10.1117/12.2501598

TY - GEN

T1 - Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

AU - Nanver, Lis Karen

AU - Krakers, M.

AU - Knezevic, Tihomir

AU - Karavidas, A.

AU - Boturchuk, Ievgen

AU - Agarwal, Vishal

AU - Hueting, Raymond Josephus Engelbart

AU - Dutta, Satadal

AU - Annema, Anne J.

N1 - Conference code: 5

PY - 2018/10/8

Y1 - 2018/10/8

N2 - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

AB - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.

U2 - 10.1117/12.2501598

DO - 10.1117/12.2501598

M3 - Conference contribution

VL - 11043

BT - Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018

PB - SPIE

T2 - Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018

Y2 - 8 October 2018 through 10 October 2018

ER -

Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices

Abstract

Conference

Access to Document

Fingerprint

Cite this