Abstract
| Original language | English |
|---|---|
| Title of host publication | Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018 |
| Publisher | SPIE International |
| Volume | 11043 |
| DOIs | |
| Publication status | Published - 8 Oct 2018 |
| Event | Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa Duration: 8 Oct 2018 → 10 Oct 2018 Conference number: 5 https://www.regonline.com/builder/site/default.aspx?EventID=2019712 |
Conference
| Conference | Fifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 |
|---|---|
| Abbreviated title | SMEOS 2018 |
| Country | South Africa |
| City | Skukuza |
| Period | 8/10/18 → 10/10/18 |
| Internet address |
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Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices. / Nanver, Lis Karen; Krakers, M.; Knezevic, Tihomir ; Karavidas, A.; Boturchuk, Ievgen ; Agarwal, Vishal ; Hueting, Raymond Josephus Engelbart; Dutta, Satadal ; Annema, Anne J.
Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018. Vol. 11043 SPIE International, 2018.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices
AU - Nanver, Lis Karen
AU - Krakers, M.
AU - Knezevic, Tihomir
AU - Karavidas, A.
AU - Boturchuk, Ievgen
AU - Agarwal, Vishal
AU - Hueting, Raymond Josephus Engelbart
AU - Dutta, Satadal
AU - Annema, Anne J.
PY - 2018/10/8
Y1 - 2018/10/8
N2 - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
AB - The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
U2 - 10.1117/12.2501598
DO - 10.1117/12.2501598
M3 - Conference contribution
VL - 11043
BT - Fifth Conference on Sensors, MEMS and Electro-Optical Systems 2018
PB - SPIE International
ER -