Investigation of the Thermal Diffusion during the Formation of a Quasicrystalline Phase in Thin Al–Pd–Re Films

A.Y. Seregin, Igor Alexandrovich Makhotkin, S.N. Yakunin, A.I. Erko, E.A. Chikina, M.N. Mikheeva, E.D. Ol’shanskii

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Abstract—The layer mixing during the formation of the Al70Pd20Re10 icosahedral quasicrystalline phase in thin (55 nm) Al–Pd–Re layered film systems subjected to vacuum annealing has been studied. It is shown that a combined layer of Pd and Al atoms (with the Al3Pd2 phase dominating) is formed in the first stage (at 350°C), while the rhenium layer remains invariable. In the second annealing stage (at 450°C), the β'AlPd phase is formed and the Re layer is diffused. In the third stage (700°C), Pd and Re atoms are uniformly distributed throughout the film with the formation of a quasicrystalline phase.
Original languageUndefined
Pages (from-to)497-501
JournalCrystallography reports
Issue number3
Publication statusPublished - 2011


  • METIS-304865

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