@inproceedings{3eb3d5b504cc4887b955260b8a8c2c56,
title = "Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions",
abstract = "In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism",
keywords = "METIS-113966, IR-17078",
author = "G. Boselli and Stan Meeuwsen and A.J. Mouthaan and F.G. Kuper",
year = "1999",
month = sep,
day = "27",
doi = "10.1109/EOSESD.1999.818984",
language = "Undefined",
isbn = "99TH8396",
publisher = "IEEE",
pages = "11--18",
booktitle = "EOS/ESD symposium proceedings 1999",
address = "United States",
note = "null ; Conference date: 28-09-1999 Through 30-09-1999",
}