Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli; Stan Meeuwsen; A.J. Mouthaan; F.G. Kuper

doi:10.1109/EOSESD.1999.818984

Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

418 Downloads (Pure)

Abstract

In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

Original language	Undefined
Title of host publication	EOS/ESD symposium proceedings 1999
Place of Publication	Florida, USA
Publisher	IEEE
Pages	11-18
Number of pages	8
ISBN (Print)	99TH8396
DOIs	https://doi.org/10.1109/EOSESD.1999.818984
Publication status	Published - 27 Sep 1999

Publication series

Name
Publisher	IEEE

Keywords

METIS-113966
IR-17078

Access to Document

10.1109/EOSESD.1999.818984

00818984
open

Cite this

Boselli, G., Meeuwsen, S., Mouthaan, A. J., & Kuper, F. G. (1999). Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. In EOS/ESD symposium proceedings 1999 (pp. 11-18). Florida, USA: IEEE. https://doi.org/10.1109/EOSESD.1999.818984

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KW - IR-17078

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