Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

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    Abstract

    In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
    Original languageUndefined
    Title of host publicationEOS/ESD symposium proceedings 1999
    Place of PublicationFlorida, USA
    PublisherIEEE
    Pages11-18
    Number of pages8
    ISBN (Print)99TH8396
    DOIs
    Publication statusPublished - 27 Sep 1999
    EventElectrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, 1999 - Florida, USA
    Duration: 28 Sep 199930 Sep 1999

    Publication series

    Name
    PublisherIEEE

    Conference

    ConferenceElectrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, 1999
    Period28/09/9930/09/99
    Other28-30 Sept. 1999

    Keywords

    • METIS-113966
    • IR-17078

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