Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli; Stan Meeuwsen; A.J. Mouthaan; F.G. Kuper

doi:10.1109/EOSESD.1999.818984

Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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623 Downloads (Pure)

Abstract

In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

Original language	Undefined
Title of host publication	EOS/ESD symposium proceedings 1999
Place of Publication	Florida, USA
Publisher	IEEE
Pages	11-18
Number of pages	8
ISBN (Print)	99TH8396
DOIs	https://doi.org/10.1109/EOSESD.1999.818984
Publication status	Published - 27 Sep 1999
Event	Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, 1999 - Florida, USA Duration: 28 Sep 1999 → 30 Sep 1999

Publication series

Name
Publisher	IEEE

Conference

Conference	Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, 1999
Period	28/09/99 → 30/09/99
Other	28-30 Sept. 1999

Keywords

METIS-113966
IR-17078

Access to Document

10.1109/EOSESD.1999.818984

00818984
open

Cite this

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title = "Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions",

abstract = "In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism",

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AU - Boselli, G.

AU - Meeuwsen, Stan

AU - Mouthaan, A.J.

AU - Kuper, F.G.

PY - 1999/9/27

Y1 - 1999/9/27

N2 - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

AB - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

KW - METIS-113966

KW - IR-17078

U2 - 10.1109/EOSESD.1999.818984

DO - 10.1109/EOSESD.1999.818984

M3 - Conference contribution

SN - 99TH8396

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EP - 18

BT - EOS/ESD symposium proceedings 1999

PB - IEEE

CY - Florida, USA

Y2 - 28 September 1999 through 30 September 1999

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