Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | EOS/ESD symposium proceedings 1999 |
| Place of Publication | Florida, USA |
| Publisher | IEEE |
| Pages | 11-18 |
| Number of pages | 8 |
| ISBN (Print) | 99TH8396 |
| DOIs | |
| Publication status | Published - 27 Sep 1999 |
Publication series
| Name | |
|---|---|
| Publisher | IEEE |
Keywords
- METIS-113966
- IR-17078
Cite this
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Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. / Boselli, G.; Meeuwsen, Stan; Mouthaan, A.J.; Kuper, F.G.
EOS/ESD symposium proceedings 1999. Florida, USA : IEEE, 1999. p. 11-18.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions
AU - Boselli, G.
AU - Meeuwsen, Stan
AU - Mouthaan, A.J.
AU - Kuper, F.G.
PY - 1999/9/27
Y1 - 1999/9/27
N2 - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
AB - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
KW - METIS-113966
KW - IR-17078
U2 - 10.1109/EOSESD.1999.818984
DO - 10.1109/EOSESD.1999.818984
M3 - Conference contribution
SN - 99TH8396
SP - 11
EP - 18
BT - EOS/ESD symposium proceedings 1999
PB - IEEE
CY - Florida, USA
ER -