Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

11 Citations (Scopus)
239 Downloads (Pure)

Abstract

In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
Original languageUndefined
Title of host publicationEOS/ESD symposium proceedings 1999
Place of PublicationFlorida, USA
PublisherIEEE
Pages11-18
Number of pages8
ISBN (Print)99TH8396
DOIs
Publication statusPublished - 27 Sep 1999

Publication series

Name
PublisherIEEE

Keywords

  • METIS-113966
  • IR-17078

Cite this

Boselli, G., Meeuwsen, S., Mouthaan, A. J., & Kuper, F. G. (1999). Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. In EOS/ESD symposium proceedings 1999 (pp. 11-18). Florida, USA: IEEE. https://doi.org/10.1109/EOSESD.1999.818984
Boselli, G. ; Meeuwsen, Stan ; Mouthaan, A.J. ; Kuper, F.G. / Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. EOS/ESD symposium proceedings 1999. Florida, USA : IEEE, 1999. pp. 11-18
@inproceedings{3eb3d5b504cc4887b955260b8a8c2c56,
title = "Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions",
abstract = "In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism",
keywords = "METIS-113966, IR-17078",
author = "G. Boselli and Stan Meeuwsen and A.J. Mouthaan and F.G. Kuper",
year = "1999",
month = "9",
day = "27",
doi = "10.1109/EOSESD.1999.818984",
language = "Undefined",
isbn = "99TH8396",
publisher = "IEEE",
pages = "11--18",
booktitle = "EOS/ESD symposium proceedings 1999",
address = "United States",

}

Boselli, G, Meeuwsen, S, Mouthaan, AJ & Kuper, FG 1999, Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. in EOS/ESD symposium proceedings 1999. IEEE, Florida, USA, pp. 11-18. https://doi.org/10.1109/EOSESD.1999.818984

Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. / Boselli, G.; Meeuwsen, Stan; Mouthaan, A.J.; Kuper, F.G.

EOS/ESD symposium proceedings 1999. Florida, USA : IEEE, 1999. p. 11-18.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

AU - Boselli, G.

AU - Meeuwsen, Stan

AU - Mouthaan, A.J.

AU - Kuper, F.G.

PY - 1999/9/27

Y1 - 1999/9/27

N2 - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

AB - In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism

KW - METIS-113966

KW - IR-17078

U2 - 10.1109/EOSESD.1999.818984

DO - 10.1109/EOSESD.1999.818984

M3 - Conference contribution

SN - 99TH8396

SP - 11

EP - 18

BT - EOS/ESD symposium proceedings 1999

PB - IEEE

CY - Florida, USA

ER -

Boselli G, Meeuwsen S, Mouthaan AJ, Kuper FG. Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. In EOS/ESD symposium proceedings 1999. Florida, USA: IEEE. 1999. p. 11-18 https://doi.org/10.1109/EOSESD.1999.818984