Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

G. Boselli, Stan Meeuwsen, A.J. Mouthaan, F.G. Kuper

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    Abstract

    In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
    Original languageUndefined
    Title of host publicationEOS/ESD symposium proceedings 1999
    Place of PublicationFlorida, USA
    PublisherIEEE
    Pages11-18
    Number of pages8
    ISBN (Print)99TH8396
    DOIs
    Publication statusPublished - 27 Sep 1999

    Publication series

    Name
    PublisherIEEE

    Keywords

    • METIS-113966
    • IR-17078

    Cite this

    Boselli, G., Meeuwsen, S., Mouthaan, A. J., & Kuper, F. G. (1999). Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. In EOS/ESD symposium proceedings 1999 (pp. 11-18). Florida, USA: IEEE. https://doi.org/10.1109/EOSESD.1999.818984